X-On Electronics has gained recognition as a prominent supplier of BR24T08F-WE2 EEPROM across the USA, India, Europe, Australia, and various other global locations. BR24T08F-WE2 EEPROM are a product manufactured by ROHM. We provide cost-effective solutions for EEPROM, ensuring timely deliveries around the world.

BR24T08F-WE2 ROHM

BR24T08F-WE2 electronic component of ROHM
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Part No.BR24T08F-WE2
Manufacturer: ROHM
Category: EEPROM
Description: ROHM Semiconductor EEPROM Hi-Rel Serial EEPROM of I2C BUS
Datasheet: BR24T08F-WE2 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.1693 ea
Line Total: USD 0.85 
Availability - 641
Ship by Fri. 03 Jan to Wed. 08 Jan
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
641
Ship by Fri. 03 Jan to Wed. 08 Jan
MOQ : 5
Multiples : 5
5 : USD 0.1693
50 : USD 0.1374
150 : USD 0.124
500 : USD 0.1068
2500 : USD 0.0861
5000 : USD 0.0816
10000 : USD 0.0805

2045
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 329
Multiples : 1
329 : USD 0.3561
500 : USD 0.3414

194
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 86
Multiples : 1
86 : USD 0.4728
100 : USD 0.4567
200 : USD 0.4534

   
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We are delighted to provide the BR24T08F-WE2 from our EEPROM category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the BR24T08F-WE2 and other electronic components in the EEPROM category and beyond.

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Datasheet Serial EEPROM Series Standard EEPROM 2 I C BUS EEPROM (2-Wire) BR24T08-W General Description 2 BR24T08-W is a serial EEPROM of I C BUS Interface Method Features Packages W(Typ) x D(Typ) x H(Max) 2 Completely conforming to the world standard I C BUS. Not Recommended for All controls available by 2 ports of serial clock New Designs (SCL) and serial data (SDA) Other devices than EEPROM can be connected to DIP-T8 TSSOP-B8 the same port, saving microcontroller port 3.00mm x 6.40mm x 1.20mm 9.30mm x 6.50mm x 7.10mm 1.6V to 5.5v Single Power Source Operation most suitable for battery use 1.6V to 5.5V wide limit of operating voltage, possible FAST MODE 400kHz operation Page Write Mode useful for initial value write at SOP8 TSSOP-B8J factory shipment 5.00mm x 6.20mm x 1.71mm 3.00mm x 4.90mm x 1.10mm Self-timed Programming Cycle Low current Consumption Prevention of Write Mistake Write (Write Protect) Function added Prevention of Write Mistake at Low Voltage SOP-J8 MSOP8 More than 1 million write cycles 4.90mm x 6.00mm x 1.65mm 2.90mm x 4.00mm x 0.90mm More than 40 years data retention Noise filter built in SCL / SDA terminal Initial delivery state FFh SOP-J8A VSON008X2030 4.90mm x 6.00mm x 1.75mm 2.00mm x 3.00mm x 0.60mm SSOP-B8 3.00mm x 6.40mm x 1.35mm BR24T08-W Figure 1. Power Source Capacity Bit Format Type Package Voltage *1 BR24T08-W DIP-T8 BR24T08F-W SOP8 BR24T08FJ-W SOP-J8 BR24T08FJ-WSGN SOP-J8A 8Kbit 1K8 BR24T08FV-W 1.6V to 5.5V SSOP-B8 BR24T08FVT-W TSSOP-B8 BR24T08FVJ-W TSSOP-B8J BR24T08FVM-W MSOP8 BR24T08NUX-W VSON008X2030 *1 Not Recommended for New Designs. Product structure : Silicon monolithic integrated circuit This product has no designed protection against radioactive rays www.rohm.com TSZ02201-0R2R0G100100-1-2 2013 ROHM Co., Ltd. All rights reserved. 1/35 TSZ2211114001 11.Jun.2019 Rev.007 Datasheet BR24T08-W Absolute Maximum Ratings (Ta=25C) Parameter Symbol Rating Unit Remark Supply Voltage VCC -0.3 to +6.5 V 450 (SOP8) Derate by 4.5mW/C when operating above Ta=25C 450 (SOP-J8) Derate by 4.5mW/C when operating above Ta=25C 300 (SSOP-B8) Derate by 3.0mW/C when operating above Ta=25C 330 (TSSOP-B8) Derate by 3.3mW/C when operating above Ta=25C Power Dissipation Pd mW 310 (TSSOP-B8J) Derate by 3.1mW/C when operating above Ta=25C 310 (MSOP8) Derate by 3.1mW/C when operating above Ta=25C 300 (VSON008X2030) Derate by 3.0mW/C when operating above Ta=25C (1) 800 (DIP-T8 ) Derate by 8.0mW/C when operating above Ta=25C Storage Temperature Tstg -65 to +150 C Operating Temperature Topr -40 to +85 C The Max value of input voltage / output voltage is not over 6.5V. Input Voltage/ - -0.3 to Vcc+1.0 V When the pulse width is 50ns or less the Min value of input voltage / Output Voltage output voltage is not lower than -0.8V. Junction Tjmax 150 C Junction temperature at the storage condition Temperature Electrostatic discharge voltage VESD -4000 to +4000 V (human body model) (1) Not Recommended for New Designs. Memory Cell Characteristics (Ta=25C, Vcc=1.6V to 5.5V) Limit Parameter Unit Min Typ Max (2) 1,000,000 - - Times Write Cycles (2) Data Retention 40 - - Years (2) Not 100% TESTED Recommended Operating Ratings Parameter Symbol Rating Unit Power Source Voltage VCC 1.6 to 5.5 V Input Voltage VIN 0 to Vcc DC Characteristics (Unless otherwise specified, Ta= -40C to +85C, Vcc=1.6V to 5.5V) Limit Parameter Symbol Unit Conditions Min Typ Max Input High Voltage1 VIH1 0.7Vcc - Vcc+1.0 V 1.7VVcc5.5V (3) Input Low Voltage1 V -0.3 - +0.3Vcc V 1.7VVcc5.5V IL1 Input High Voltage2 VIH2 0.8Vcc - Vcc+1.0 V 1.6VVcc<1.7V (3) Input Low Voltage2 V -0.3 - +0.2Vcc V 1.6VVcc<1.7V IL2 Output Low Voltage1 VOL1 - - 0.4 V IOL=3.0mA, 2.5VVcc5.5V (SDA) Output Low Voltage2 VOL2 - - 0.2 V IOL=0.7mA, 1.6VVcc<2.5V (SDA) Input Leakage Current I -1 - +1 A V =0 to Vcc LI IN Output Leakage Current ILO -1 - +1 A VOUT=0 to Vcc (SDA) Vcc=5.5V, f =400kHz, t =5ms, SCL WR Supply Current (Write) I - - 2.0 mA CC1 Byte write, Page write Vcc=5.5V, f =400kHz SCL Supply Current (Read) I - - 0.5 mA CC2 Random read, current read, sequential read Vcc=5.5V, SDA SCL=Vcc Standby Current ISB - - 2.0 A A0,A1,A2=GND,WP=GND (3) When the pulse width is 50ns or less, it is -0.8V. www.rohm.com TSZ02201-0R2R0G100100-1-2 2013 ROHM Co., Ltd. All rights reserved. 2/35 TSZ2211115001 11.Jun.2019 Rev.007

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)
RHE
RHM
ROHM Semicon
ROHM Semiconductor
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