EMD6 FHA General purpose (Dual digital transistor) Datasheet AEC-Q101 Qualified <For DTr1(NPN)> llOutline Parameter Value SOT-563 V 50V CEO SC-107C I 100mA C R 4.7k 1 EMT6 <For DTr2(PNP)> Parameter Value V -50V CEO I -100mA C R 4.7k 1 llFeatures llInner circuit 1)Both the DTA143T chip and DTC143T chip in an EMT6 package. 2)Mounting possible with EMT3 automatic mounting machines. 3)Transistor elements are independent, eliminating interference. 4)Mounting cost and area can be cut in half. llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-563 EMD6 FHA 1616 T2R 180 8 8000 D6 (EMT6) www.rohm.com 1/5 20161012 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.EMD6 FHA Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol DTr1(NPN) DTr2(PNP) Unit V Collector-base voltage 50 -50 V CBO Collector-emitter voltage V 50 -50 V CEO V Emitter-base voltage 5 -5 V EBO Collector current I 100 -100 mA C *1*2 P Power dissipation 150 mW/Total D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) <For DTr1(NPN)> a Values Parameter Symbol Conditions Unit Min. Typ. Max. BV Collector-base breakdown voltage I = 50A 50 - - V CBO C Collector-emitter breakdown BV I = 1mA 50 - - V CEO C voltage BV Emitter-base breakdown voltage I = 50A 5 - - V EBO E I Collector cut-off current V = 50V - - 500 nA CBO CB Emitter cut-off current I V = 4V - - 500 nA EBO EB Collector-emitter saturation voltage V I = 5mA, I = 250A - - 300 mV CE(sat) C B h DC current gain V = 5V, I = 1mA 100 250 600 - FE CE C Input resistance R - 3.29 4.7 6.11 k 1 V = 10V, I = -5mA, CE E *3 f Transition frequency - 250 - MHz T f = 100MHz llElectrical characteristics (T = 25C) <For DTr2(PNP)> a Values Parameter Symbol Conditions Unit Min. Typ. Max. BV Collector-base breakdown voltage I = -50A -50 - - V CBO C Collector-emitter breakdown BV I = -1mA -50 - - V CEO C voltage Emitter-base breakdown voltage BV I = -50A -5 - - V EBO E I Collector cut-off current V = -50V - - -500 nA CBO CB Emitter cut-off current I V = -4V - - -500 nA EBO EB I = -5mA, I = -0.25mA Collector-emitter saturation voltage V - - -300 mV CE(sat) C B h DC current gain V = -5V, I = -1mA 100 250 600 - FE CE C Input resistance R - 3.29 4.7 6.11 k 1 V = -10V, I = 5mA, CE E *3 f Transition frequency - 250 - MHz T f = 100MHz *1 Each terminal mounted on a reference land. *2 120mW per element must not be exceeded. *3 200mW per element must not be exceeded. *4 Characteristics of built-in transistor. www.rohm.com 2/5 20161012 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.