X-On Electronics has gained recognition as a prominent supplier of EMD6FHAT2R Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. EMD6FHAT2R Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

EMD6FHAT2R ROHM

EMD6FHAT2R electronic component of ROHM
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Part No.EMD6FHAT2R
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT NPN+PNP SOT-563 4.7kO Input Resist
Datasheet: EMD6FHAT2R Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3344 ea
Line Total: USD 0.33 
Availability - 6750
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ: 1  Multiples: 1
Pack Size: 1

 EMD6FHAT2R More Buying Options & Price Grid(s)

Availability Price Quantity
6750
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 0.3344
10 : USD 0.3135
100 : USD 0.3036
1000 : USD 0.1617
2500 : USD 0.1408
8000 : USD 0.0528
24000 : USD 0.0484
48000 : USD 0.0473
96000 : USD 0.0451

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Qualification
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the EMD6FHAT2R from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the EMD6FHAT2R and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

EMD6 FHA General purpose (Dual digital transistor) Datasheet AEC-Q101 Qualified <For DTr1(NPN)> llOutline Parameter Value SOT-563 V 50V CEO SC-107C I 100mA C R 4.7k 1 EMT6 <For DTr2(PNP)> Parameter Value V -50V CEO I -100mA C R 4.7k 1 llFeatures llInner circuit 1)Both the DTA143T chip and DTC143T chip in an EMT6 package. 2)Mounting possible with EMT3 automatic mounting machines. 3)Transistor elements are independent, eliminating interference. 4)Mounting cost and area can be cut in half. llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-563 EMD6 FHA 1616 T2R 180 8 8000 D6 (EMT6) www.rohm.com 1/5 20161012 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.EMD6 FHA Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol DTr1(NPN) DTr2(PNP) Unit V Collector-base voltage 50 -50 V CBO Collector-emitter voltage V 50 -50 V CEO V Emitter-base voltage 5 -5 V EBO Collector current I 100 -100 mA C *1*2 P Power dissipation 150 mW/Total D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) <For DTr1(NPN)> a Values Parameter Symbol Conditions Unit Min. Typ. Max. BV Collector-base breakdown voltage I = 50A 50 - - V CBO C Collector-emitter breakdown BV I = 1mA 50 - - V CEO C voltage BV Emitter-base breakdown voltage I = 50A 5 - - V EBO E I Collector cut-off current V = 50V - - 500 nA CBO CB Emitter cut-off current I V = 4V - - 500 nA EBO EB Collector-emitter saturation voltage V I = 5mA, I = 250A - - 300 mV CE(sat) C B h DC current gain V = 5V, I = 1mA 100 250 600 - FE CE C Input resistance R - 3.29 4.7 6.11 k 1 V = 10V, I = -5mA, CE E *3 f Transition frequency - 250 - MHz T f = 100MHz llElectrical characteristics (T = 25C) <For DTr2(PNP)> a Values Parameter Symbol Conditions Unit Min. Typ. Max. BV Collector-base breakdown voltage I = -50A -50 - - V CBO C Collector-emitter breakdown BV I = -1mA -50 - - V CEO C voltage Emitter-base breakdown voltage BV I = -50A -5 - - V EBO E I Collector cut-off current V = -50V - - -500 nA CBO CB Emitter cut-off current I V = -4V - - -500 nA EBO EB I = -5mA, I = -0.25mA Collector-emitter saturation voltage V - - -300 mV CE(sat) C B h DC current gain V = -5V, I = -1mA 100 250 600 - FE CE C Input resistance R - 3.29 4.7 6.11 k 1 V = -10V, I = 5mA, CE E *3 f Transition frequency - 250 - MHz T f = 100MHz *1 Each terminal mounted on a reference land. *2 120mW per element must not be exceeded. *3 200mW per element must not be exceeded. *4 Characteristics of built-in transistor. www.rohm.com 2/5 20161012 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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