X-On Electronics has gained recognition as a prominent supplier of EML22T2R Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. EML22T2R Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

EML22T2R ROHM

EML22T2R electronic component of ROHM
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See Product Specifications
Part No.EML22T2R
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT Bipolar Transistor SOT-563 SC-107C EMT6
Datasheet: EML22T2R Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4653 ea
Line Total: USD 0.47 
Availability - 15519
Ship by Mon. 02 Dec to Wed. 04 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
15519
Ship by Mon. 02 Dec to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 0.4653
10 : USD 0.2948
100 : USD 0.1474
1000 : USD 0.1199
2500 : USD 0.1188
8000 : USD 0.1001
24000 : USD 0.0891

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the EML22T2R from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the EML22T2R and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Data Sheet POWER SUPPLY MONITOR DEVICES EML22/UML23N Features Dimensions (Unit : mm) 1) Packaging Zener diode and small-signal amplifier transistor EMT6 2) Using outside connection able to use Power supply monitor device (6) (5) (4) 3) When use Power supply monitor device, Temparature drift characteristics of detect voltage is about (1) (2) (3) 150 ppm/C. MARKING :L22 (EMT6) Applications Protection of over load of power supply. UMT6 (SC-88) <SOT-363> (6) (5) (4) Packaging specifications and Marking Type EML22 UML23N Package EMT6 UMT6 (1) (2) (3) Marking L22 L23 Code T2R TR MARKING :L23 (UMT6) Basic ordering unit (pieces) 8000 3000 Absolute maximum ratings (Ta=25C) Internal circuit Tr Parameter Symbol Limits Unit (1)ANODE DI (6 ) (5) (4 ) Collector-base voltage V 60 V (2)BASE TR CBO Collector-emitter voltage V 50 V (3)EMITTERTR CEO Emitter-base voltage V 7V (4)COLLECTORTR EBO Collector current I 150 mA (5)N.C. C *1 Power dissipation P 120 mW (1 ) (2) (3 ) (6)CATHODEDI D Di Parameter Symbol Limits Unit Power dissipation *1 P 120 mW D Tr and Di Parameter Symbol Limits Unit *1 Power dissipation P 150 mW D Junction temperature Tj 150 C Range of storage temperature Tstg 55 to 150 C *1 Mounted on reference land. www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.10 - Rev.A 1/4Data Sheet EML22/UML23N Electrical characteristics (Ta = 25C) Tr Parameter Conditions Symbol Min. Typ. Max. Unit Collector-emitter brekdown voltage BV 50 V I =1 A CEO C Collector-base breakdown voltage BV I =50A 60 V CBO C Emitter-base breakdown voltage BV I =50A 7 V EBO E Collector cut-off current I 100 nA V =60V CBO CB Emitter cut-off current I V =7V 100 nA EBO EB Collector-emitter saturation voltage V 400 mV I /I =50mA/5mA CE(sat) C B DC current gain h V =6V,I =1mA 120 390 FE CE C V =12V,I = 2mA, CE E f Transition frequency 180 MHz T f=100MH V =12V,I =0A, CB E C Output capacitance 2 pF ob f=1MH Di Parameter Symbol Min. Typ. Max. Unit Conditions Zener voltage V I =5mA Z 6.58 6.80 7.00 V Z Reverse current I 0.5 mA V =3.5V R R www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.10 - Rev.A

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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