VT6T2 / EMT52 Datasheet Power management (dual transistors) llOutline Parameter Tr1 and Tr2 SOT-563 V -50V CEO I -100mA C VT6T2 EMT52 (VMT6) (EMT6) llFeatures llInner circuit 1) General Purpose. 2) Two 2SAR523 chips in one package. 3) Transister elements are independent, eliminating interface. 4) Mounting cost and area can be cut in half. llApplication SWITCH, LED DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) VT6T2 1212 T2R 180 8 8000 T2 (VMT6) SOT-563 EMT52 1616 T2R 180 8 8000 T52 (EMT6) www.rohm.com 1/7 20151204 - Rev.003 2015 ROHM Co., Ltd. All rights reserved.VT6T2 / EMT52 Datasheet llAbsolute maximum ratings (T = 25C) a <It is the same ratings for the Tr1 and Tr2> Parameter Symbol Values Unit V Collector-base voltage -50 V CBO V Collector-emitter voltage -50 V CEO V Emitter-base voltage -5 V EBO I -100 mA C Collector current *1 I -200 mA CP Power dissipation VT6T2 150 *2 *3 P mW D EMT52 150 T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a <It is the same characteristics for the Tr1 and Tr2> Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -50A -50 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -50 - - V CEO C voltage BV I = -50A Emitter-base breakdown voltage -5 - - V EBO E I V = -50V Collector cut-off current - - -100 nA CBO CB I Emitter cut-off current V = -5V - - -100 nA EBO EB Collector-emitter saturation voltage V I = -50mA, I = -5mA - -150 -400 mV CE(sat) C B h V = -6V, I = -1mA DC current gain 120 - 560 - FE CE C V = -10V, I = 10mA, CE E Transition frequency f - 300 - MHz T f = 100MHz V = 10V, I = 0A, CB E C Output capacitance - 1.6 - pF ob f = 1MHz *1 Pw=10ms Single Pulse *2 Each terminal mounted on a reference land. *3 120mW per element must not be exceeded. www.rohm.com 2/7 20151204 - Rev.003 2015 ROHM Co., Ltd. All rights reserved.