X-On Electronics has gained recognition as a prominent supplier of EMX18T2R Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. EMX18T2R Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

EMX18T2R ROHM

EMX18T2R electronic component of ROHM
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See Product Specifications
Part No.EMX18T2R
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: ROHM Semiconductor Bipolar Transistors - BJT DUAL NPN 12V 500MA
Datasheet: EMX18T2R Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.5183 ea
Line Total: USD 0.52 
Availability - 4822
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ: 1  Multiples: 1
Pack Size: 1

 EMX18T2R More Buying Options & Price Grid(s)

Availability Price Quantity
44
Ship by Fri. 29 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 0.5272
10 : USD 0.4704
30 : USD 0.4419
100 : USD 0.4132
500 : USD 0.3966
1000 : USD 0.3884

4822
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 0.5183
10 : USD 0.4046
100 : USD 0.282
500 : USD 0.2296
1000 : USD 0.195
8000 : USD 0.1784
24000 : USD 0.175
48000 : USD 0.1727

7609
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ : 33
Multiples : 1
33 : USD 1.2159
52 : USD 0.7576
100 : USD 0.4899
200 : USD 0.4882
500 : USD 0.3749
1000 : USD 0.3371
2000 : USD 0.3056

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the EMX18T2R from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the EMX18T2R and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

EMX18 / UMX18N Datasheet General purpose transistors (dual transistors) llOutline Parameter Tr1 and Tr2 SOT-563 SOT-363 V 12V CEO I 500mA C EMX18 UMX18N (EMT6) (UMT6) llFeatures llInner circuit 1)Two 2SC5585 chips in a EMT or UMT package. 2)Mounting possible with EMT3 or UMT3 automatic mounting machines. 3)Transistor elements are independent, eliminating interference. 4)Mounting cost and area can be cut in half. llApplication LOW FREQUENCY AMPLIFIER, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-563 EMX18 1616 T2R 180 8 8000 X18 (EMT6) SOT-363 UMX18N 2021 TN 180 8 3000 X18 (UMT6) www.rohm.com 1/7 20150910 - Rev.001 2015 ROHM Co., Ltd. All rights reserved.EMX18 / UMX18N Datasheet llAbsolute maximum ratings (T = 25C) a <It is the same ratings for the Tr1 and Tr2> Parameter Symbol Values Unit V Collector-base voltage 15 V CBO V Collector-emitter voltage 12 V CEO V Emitter-base voltage 6 V EBO I 500 mA C Collector current *1 I 1.0 A CP Power dissipation EMX18 150 *2 *3 P mW D UMX18N 150 T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a <It is the same characteristics for the Tr1 and Tr2> Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 10A 15 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 12 - - V CEO C voltage BV I = 10A Emitter-base breakdown voltage 6 - - V EBO E I V = 15V Collector cut-off current - - 100 nA CBO CB I Emitter cut-off current V = 6V - - 100 nA EBO EB Collector-emitter saturation voltage V I = 200mA, I = 10mA - 90 250 mV CE(sat) C B h V = 2V, I = 10mA DC current gain 270 - 680 - FE CE C V = 2V, I = -10mA, CE E Transition frequency f - 320 - MHz T f = 100MHz V = 10V, I = 0A, CB E C Output capacitance - 7.5 - pF ob f = 1MHz *1 Pw=1ms Single Pulse *2 Each terminal mounted on a reference land. *3 120mW per element must not be exceeded. www.rohm.com 2/7 20150910 - Rev.001 2015 ROHM Co., Ltd. All rights reserved.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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