X-On Electronics has gained recognition as a prominent supplier of EMX1T2R Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. EMX1T2R Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

EMX1T2R ROHM

Hot EMX1T2R electronic component of ROHM
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See Product Specifications
Part No.EMX1T2R
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT DUAL NPN 50V 150MA
Datasheet: EMX1T2R Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 0.0579 ea
Line Total: USD 0.58 
Availability - 155508
Ship by Fri. 29 Nov to Wed. 04 Dec
MOQ: 10  Multiples: 10
Pack Size: 10

 EMX1T2R More Buying Options & Price Grid(s)

Availability Price Quantity
155508
Ship by Fri. 29 Nov to Wed. 04 Dec
MOQ : 10
Multiples : 10
10 : USD 0.0579
100 : USD 0.0513
300 : USD 0.0479
1000 : USD 0.0454
5000 : USD 0.0435
8000 : USD 0.0424

27858
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 0.418
10 : USD 0.2706
100 : USD 0.1408
1000 : USD 0.1188
8000 : USD 0.0946
48000 : USD 0.0902

45100
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ : 372
Multiples : 1
372 : USD 0.1093
581 : USD 0.0701
1000 : USD 0.0677
2000 : USD 0.0642
8000 : USD 0.0599
16000 : USD 0.0549

7760
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ : 863
Multiples : 1
863 : USD 0.1139
1000 : USD 0.1102
2500 : USD 0.107
5000 : USD 0.1041

12970
Ship by Fri. 22 Nov to Thu. 28 Nov
MOQ : 343
Multiples : 1
343 : USD 0.2975
500 : USD 0.2868
1000 : USD 0.2774
2500 : USD 0.2692
5000 : USD 0.262
10000 : USD 0.2556

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Category
Brand Category
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the EMX1T2R from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the EMX1T2R and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

EMX1 / UMX1N / IMX1 Datasheet General purpose transistor (dual transistors) llOutline Parameter Tr1 and Tr2 SOT-563 SOT-363 V 50V CEO I 150mA C EMX1 UMX1N (EMT6) (UMT6) SOT-457 llFeatures 1) Two 2SC2412K chips in a EMT, UMT or SMT package. 2) Mounting possible with EMT3, UMT3 or SMT3 IMX1 (SMT6) automatic mounting machines. 3) Transistor elements are independent, llInner circuit eliminating interference. 4) Mounting cost and area can be cut in half. EMX1 / UMX1N IMX1 llApplication GENERAL PURPOSE SMALL SIGNAL AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-563 EMX1 1616 T2R 180 8 8000 X1 (EMT6) SOT-363 UMX1N 2021 TN 180 8 3000 X1 (UMT6) SOT-457 IMX1 2928 T110 180 8 3000 X1 (SMT6) www.rohm.com 1/8 20150825 - Rev.003 2015 ROHM Co., Ltd. All rights reserved.EMX1 / UMX1N / IMX1 Datasheet llAbsolute maximum ratings (T = 25C) a <For Tr1 and Tr2 in common> Parameter Symbol Values Unit V Collector-base voltage 60 V CBO V Collector-emitter voltage 50 V CEO V Emitter-base voltage 7 V EBO I Collector current 150 mA C *1 *2 P EMX1/ UMX1N 150 mW/Total D Power dissipation *1 *3 P IMX1 300 mW/Total D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a <For Tr1 and Tr2 in common> Values Parameter Symbol Conditions Unit Min. Typ. Max. BV I = 50A Collector-base breakdown voltage 60 - - V CBO C Collector-emitter breakdown BV I = 1mA 50 - - V CEO C voltage BV I = 50A Emitter-base breakdown voltage 7 - - V EBO E I V = 60V Collector cut-off current - - 100 nA CBO CB I Emitter cut-off current V = 7V - - 100 nA EBO EB Collector-emitter saturation voltage V I = 50mA, I = 5mA - - 400 mV CE(sat) C B h V = 6V, I = 1mA DC current gain 120 - 560 - FE CE C V = 12V, I = -2mA, CE E Transition frequency f - 180 - MHz T f = 100MHz V = 12V, I = 0A, CB E C Output capacitance - 2.0 3.5 pF ob f = 1MHz *1 Each terminal mounted on a reference land. *2 120mW per element must not be exceeded. *3 200mW per element must not be exceeded. www.rohm.com 2/8 20150825 - Rev.003 2015 ROHM Co., Ltd. All rights reserved.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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