EMX26T2R ROHM

EMX26 Transistors General purpose transistors (dual transistors) EMX26 z External dimensions (Unit : mm) z Features 1) Two 2SD2654 chips in a EMT package. EMX26 2) Mounting possible with EMT3 automatic mounting machines. (4) (3) ( ) ( ) 5 2 3) Transistor elements are independent, eliminating (6) (1) 1.2 1.6 interference. 4) Mounting cost and area can be cut in half. Each lead has same dimensions ROHM : EMT6 Abbreviated symbol : X26 z Structure Epitaxial planar type NPN silicon transistor The following characteristics apply to both Tr1 and Tr2. z Equivalent circuit EMX26 (3) (2) (1) Tr1 Tr2 (4) (5) (6) z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage 12 V VEBO 0.15 A (DC) IC Collector current 0.2 A (Pulse) 1 Pd 150 (TOTAL) 2 Power dissipation mW Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C 1 Single pulse Pw=100ms. 2 120mW per element must not be exceeded. 1/3 0.22 0.13 0.5 0.5 1.0 0.5 1.650A EMX26 Transistors z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 60 V IC=10A Collector-emitter breakdown voltage BVCEO 50 V IC=1mA Emitter-base breakdown voltage BVEBO 12 V IE=10A Collector cutoff current ICBO 0.3 A VCB=50V Emitter cutoff current IEBO 0.3 A VEB=12V Collector-emitter saturation voltage VCE(sat) 0.3 V IC/IB=50mA/5mA DC current transfer ratio hFE 820 2700 VCE/IC=5V/1mA Transition frequency fT 250 MHz VCE=5V, IE=10mA, f=100MHz Output capacitance Cob 3.5 pF VCB=5V, IE=0A, f=1MHz Measured using pulse current. z Packaging specifications Package Taping Code T2R Basic ordering 8000 Type unit (pieces) EMX26 z Electrical characteristic curves 2.0 200 200 Ta=25C VCE=5V 100 1.2A 500A 450A 1.6 160 50 2.0A 400A 1.0A 1.8A 350A 300A 1.6A 20 1.4A 1.2 0.8A 120 10 5 0.6A 0.8 80 2 0.4A 1 0.4 40 0.2A 0.5 Ta=25C Measured using pulse current IB=0 IB=0 0.2 0 0 024182160 0 0.1 0.2 0.3 0.4 0.5 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Grounded emitter output Fig.2 Grounded emitter output Fig.3 Grounded emitter propagation characteristics ( ) characteristics ( ) characteristics 10000 10000 1000 VCE=5V Ta=25C Measured Measured 5000 5000 500 using pulse current using pulse current 2000 2000 200 VCE=10V 1000 1000 100 IC / IB=50 500 500 50 20 5V 10 200 200 20 3V 100 100 10 50 50 5 20 20 2 10 10 1 0.2 0.5 1 2 5 10 20 50 100 200 0.2 0.5 1 2 5 10 20 50 100 200 0.2 0.5 12 5 10 20 50 100 200 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.5 DC current gain vs. Fig.4 DC current gain vs. Fig.6 Collector-emitter saturation voltage collector current ( ) collector current ( ) vs. collector current ( ) 2/3 Ta=25C Ta=100C 25C 25C 100A 150A 200A 250A Ta=100C 25C 25C DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (mA) DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (mA) COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) COLLECTOR CURRENT : IC (mA)