X-On Electronics has gained recognition as a prominent supplier of EMX2T2R Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. EMX2T2R Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

EMX2T2R ROHM

EMX2T2R electronic component of ROHM
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See Product Specifications
Part No.EMX2T2R
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT DUAL NPN 50V 150MA
Datasheet: EMX2T2R Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 0.052 ea
Line Total: USD 0.52 
Availability - 8837
Ship by Thu. 12 Dec to Tue. 17 Dec
MOQ: 10  Multiples: 10
Pack Size: 10

 EMX2T2R More Buying Options & Price Grid(s)

Availability Price Quantity
8837
Ship by Thu. 12 Dec to Tue. 17 Dec
MOQ : 10
Multiples : 10
10 : USD 0.052
100 : USD 0.0451
300 : USD 0.0417
1000 : USD 0.0391
5000 : USD 0.0371
8000 : USD 0.0362

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the EMX2T2R from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the EMX2T2R and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

EMX2 / UMX2N / IMX2 Datasheet General purpose transistor (dual transistors) llOutline Parameter Tr1 and Tr2 SOT-563 SOT-363 V 50V CEO I 150mA C EMX2 UMX2N (EMT6) (UMT6) SOT-457 llFeatures 1) Two 2SC2412K chips in a EMT, UMT or SMT package. 2) Mounting possible with EMT3, UMT3 or SMT3 IMX2 (SMT6) automatic mounting machines. 3) Transistor elements are independent, llInner circuit eliminating interference. 4) Mounting cost and area can be cut in half. EMX2 / UMX2N IMX2 llApplication GENERAL PURPOSE SMALL SIGNAL AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-563 EMX2 1616 T2R 180 8 8000 X2 (EMT6) SOT-363 UMX2N 2021 TR 180 8 3000 X2 (UMT6) SOT-457 IMX2 2928 T108 180 8 3000 X2 (SMT6) www.rohm.com 1/8 20150825 - Rev.003 2015 ROHM Co., Ltd. All rights reserved.EMX2 / UMX2N / IMX2 Datasheet llAbsolute maximum ratings (T = 25C) a <For Tr1 and Tr2 in common> Parameter Symbol Values Unit V Collector-base voltage 60 V CBO V Collector-emitter voltage 50 V CEO V Emitter-base voltage 7 V EBO I Collector current 150 mA C *1 *2 P EMX2/ UMX2N 150 mW/Total D Power dissipation *1 *3 P IMX2 300 mW/Total D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a <For Tr1 and Tr2 in common> Values Parameter Symbol Conditions Unit Min. Typ. Max. BV I = 50A Collector-base breakdown voltage 60 - - V CBO C Collector-emitter breakdown BV I = 1mA 50 - - V CEO C voltage BV I = 50A Emitter-base breakdown voltage 7 - - V EBO E I V = 60V Collector cut-off current - - 100 nA CBO CB I Emitter cut-off current V = 7V - - 100 nA EBO EB Collector-emitter saturation voltage V I = 50mA, I = 5mA - - 400 mV CE(sat) C B h V = 6V, I = 1mA DC current gain 120 - 560 - FE CE C V = 12V, I = -2mA, CE E Transition frequency f - 180 - MHz T f = 100MHz V = 12V, I = 0A, CB E C Output capacitance - 2.0 3.5 pF ob f = 1MHz *1 Each terminal mounted on a reference land. *2 120mW per element must not be exceeded. *3 200mW per element must not be exceeded. www.rohm.com 2/8 20150825 - Rev.003 2015 ROHM Co., Ltd. All rights reserved.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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