X-On Electronics has gained recognition as a prominent supplier of EMX51T2R Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. EMX51T2R Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

EMX51T2R ROHM

EMX51T2R electronic component of ROHM
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See Product Specifications
Part No.EMX51T2R
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT Bipolar Transistor SOT-563 SC-107C EMT6
Datasheet: EMX51T2R Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3069 ea
Line Total: USD 0.31 
Availability - 4969
Ship by Mon. 02 Dec to Wed. 04 Dec
MOQ: 1  Multiples: 1
Pack Size: 1

 EMX51T2R More Buying Options & Price Grid(s)

Availability Price Quantity
4969
Ship by Mon. 02 Dec to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 0.3069
10 : USD 0.1892
100 : USD 0.0902
1000 : USD 0.0737
2500 : USD 0.0671
8000 : USD 0.0539
24000 : USD 0.0506
48000 : USD 0.0506
96000 : USD 0.0473

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the EMX51T2R from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the EMX51T2R and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

VT6X1 / EMX51 Datasheet Power management (dual transistors) llOutline Parameter Tr1 and Tr2 SOT-563 V 20V CEO I 200mA C VT6X1 EMX51 (VMT6) (EMT6) llFeatures llInner circuit 1) General Purpose. 2) Two 2SCR522 chips in one package. 3) Transister elements are independent, eliminating interface. 4) Mounting cost and area can be cut in half. llApplication SWITCH, LED DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) VT6X1 1212 T2R 180 8 8000 X1 (VMT6) SOT-563 EMX51 1616 T2R 180 8 8000 X51 (EMT6) www.rohm.com 1/7 20160212 - Rev.003 2016 ROHM Co., Ltd. All rights reserved.VT6X1 / EMX51 Datasheet llAbsolute maximum ratings (T = 25C) a <It is the same ratings for the Tr1 and Tr2> Parameter Symbol Values Unit V Collector-base voltage 20 V CBO V Collector-emitter voltage 20 V CEO V Emitter-base voltage 5 V EBO I 200 mA C Collector current *1 I 400 mA CP Power dissipation VT6X1 150 *2 *3 P mW D EMX51 150 T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a <It is the same characteristics for the Tr1 and Tr2> Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 20 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 20 - - V CEO C voltage BV I = 50A Emitter-base breakdown voltage 5 - - V EBO E I V = 20V Collector cut-off current - - 100 nA CBO CB I Emitter cut-off current V = 5V - - 100 nA EBO EB Collector-emitter saturation voltage V I = 100mA, I = 10mA - 120 300 mV CE(sat) C B h V = 2V, I = 1mA DC current gain 120 - 560 - FE CE C V = 10V, I = -10mA, CE E Transition frequency f - 400 - MHz T f = 100MHz V = 10V, I = 0A, CB E C Output capacitance - 2.0 - pF ob f = 1MHz *1 Pw=10ms Single Pulse *2 Each terminal mounted on a reference land. *3 120mW per element must not be exceeded. www.rohm.com 2/7 20160212 - Rev.003 2016 ROHM Co., Ltd. All rights reserved.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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