EMZ52T2R ROHM

EMZ52 Datasheet Power management (dual transistors) <For Tr1(NPN)> llOutline Parameter Value SOT-563 V 50V CEO SC-107C I 100mA C <For Tr2(PNP)> EMT6 Parameter Value V -50V CEO I -100mA C llFeatures llInner circuit 1) General Purpose. 2) 2SAR523 and 2SCR523 chips in one package. 3) Transister elements are independent, eliminating interface. 4) Mounting cost and area can be cut in half. llApplication SWITCH, LED DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-563 EMZ52 1616 T2R 180 8 8000 Z52 (EMT6) www.rohm.com 1/9 20151204 - Rev.003 2015 ROHM Co., Ltd. All rights reserved.EMZ52 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Tr1(NPN) Tr2(PNP) Unit V Collector-base voltage 50 -50 V CBO Collector-emitter voltage V 50 -50 V CEO V Emitter-base voltage 5 -5 V EBO I 100 -100 mA C Collector current *1 I 200 -200 mA CP *2*3 Power dissipation P 150 mW/Total D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) <For Tr1(NPN)> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown voltage BV I = 50A 50 - - V CBO C Collector-emitter breakdown BV I = 1mA 50 - - V CEO C voltage Emitter-base breakdown voltage BV I = 50A 5 - - V EBO E Collector cut-off current I V = 50V - - 100 nA CBO CB I Emitter cut-off current V = 5V - - 100 nA EBO EB Collector-emitter saturation voltage V I = 50mA, I = 5mA - 100 300 mV CE(sat) C B DC current gain h V = 6V, I = 1mA 120 - 560 - FE CE C V = 10V, I = -10mA, CE E f Transition frequency - 350 - MHz T f = 100MHz V = 10V, I = 0A, CB E C Output capacitance - 1.6 - pF ob f = 1MHz llElectrical characteristics (T = 25C) <For Tr2(PNP)> a Values Parameter Symbol Conditions Unit Min. Typ. Max. BV Collector-base breakdown voltage I = -50A -50 - - V CBO C Collector-emitter breakdown BV I = -1mA -50 - - V CEO C voltage Emitter-base breakdown voltage BV I = -50A -5 - - V EBO E I Collector cut-off current V = -50V - - -100 nA CBO CB I Emitter cut-off current V = -5V - - -100 nA EBO EB Collector-emitter saturation voltage V I = -50mA, I = -5mA - -150 -400 mV CE(sat) C B DC current gain h V = -6V, I = -1mA 120 - 560 - FE CE C V = -10V, I = 10mA, CE E Transition frequency f - 300 - MHz T f = 100MHz V = -10V, I = 0A, CB E C Output capacitance - 2.0 - pF ob f = 1MHz *1 Pw=10ms Single Pulse *2 Each terminal mounted on a reference land. *3 120mW per element must not be exceeded. www.rohm.com 2/9 20151204 - Rev.003 2015 ROHM Co., Ltd. All rights reserved.