EMZ7T2R ROHM

EMZ7 Datasheet General purpose transistor (dual transistors) <For Tr1(NPN)> llOutline Parameter Value SOT-563 V 12V CEO SC-107C I 500mA C <For Tr2(PNP)> EMT6 Parameter Value V -12V CEO I -500mA C llFeatures llInner circuit 1)Both a 2SA2018 chip and 2SC5585 chip in a EMT package. 2)Mounting possible with EMT3 automatic mounting machines. 3)Transistor elements are independent, eliminating interference. 4)Mounting cost and area can be cut in half. 5)Low V CE(sat) llApplication GENERAL PURPOSE SMALL SIGNAL AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-563 EMZ7 1616 T2R 180 8 8000 Z7 (EMT6) www.rohm.com 1/9 20150910 - Rev.001 2015 ROHM Co., Ltd. All rights reserved.EMZ7 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Tr1(NPN) Tr2(PNP) Unit V Collector-base voltage 15 -15 V CBO V Collector-emitter voltage 12 -12 V CEO V Emitter-base voltage 6 -6 V EBO I 500 -500 mA C Collector current I 1 -1 A CP *1*2 P Power dissipation 150 mW D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) <For Tr1(NPN)> a Values Parameter Symbol Conditions Unit Min. Typ. Max. BV Collector-base breakdown voltage I = 10A 15 - - V CBO C Collector-emitter breakdown BV I = 1mA 12 - - V CEO C voltage Emitter-base breakdown voltage BV I = 10A 6 - - V EBO E I Collector cut-off current V = 15V - - 100 nA CBO CB I Emitter cut-off current V = 6V - - 100 nA EBO EB Collector-emitter saturation voltage V I = 200mA, I = 10mA - 90 250 mV CE(sat) C B h DC current gain V = 2V, I = 10mA 270 - 680 - FE CE C V = 2V, I = -10mA, CE E Transition frequency f - 320 - MHz T f = 100MHz V = 10V, I = 0A, CB E C Output capacitance - 7.5 - pF ob f = 1MHz llElectrical characteristics (T = 25C) <For Tr2(PNP)> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown voltage BV I = -10A -15 - - V CBO C Collector-emitter breakdown BV I = -1mA -12 - - V CEO C voltage BV Emitter-base breakdown voltage I = -10A -6 - - V EBO E Collector cut-off current I V = -15V - - -100 nA CBO CB Emitter cut-off current I V = -6V - - -100 nA EBO EB Collector-emitter saturation voltage V I = -200mA, I = -10mA - -100 -250 mV CE(sat) C B h DC current gain V = -2V, I = -10mA 270 - 680 - FE CE C V = -2V, I = 10mA, CE E f Transition frequency - 260 - MHz T f = 100MHz V = -10V, I = 0A, CB E C Output capacitance - 6.5 - pF ob f = 1MHz *1 Each terminal mounted on a reference land. *2 120mW per element must not be exceeded. www.rohm.com 2/9 20150910 - Rev.001 2015 ROHM Co., Ltd. All rights reserved.