EMZ8 / UMZ8N Transistors Power management (dual transistors) EMZ8 / UMZ8N z Feature 1) Both a 2SA2018 chip and 2SC2412K chip in a EMT z Dimensions(Unit : mm) or UMT package. EMZ8 (6) (5) (4) z Equivalent circuits (1) (2) (3) ROHM : EMT6 Each lead has same dimensions EIAJ : (3) (2) (1) UMZ8N Tr2 Tr1 (6) (5) (4) (4) (5) (6) (1) (2) (3) ROHM : UMT6 Each lead has same dimensions EIAJ : SC-88 z Absolute maximum ratings (Ta=25C) Limits Parameter Symbol Unit Tr2 Tr1 Collector-base voltage VCBO 15 60 V Collector-emitter voltage VCEO 50 V 12 Emitter-base voltage VEBO V 6 7 IC 500 150 mA Collector current ICP 1 A Collector power dissipation PC 150 (TOTAL) mW Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C 120mW per element must not be exceeded. z Package, marking, and packaging specifications Part No. EMZ8 UMZ8N Package EMT6 UMT6 Marking Z8 Z8 Code T2R TR Basic ordering unit (pieces) 8000 3000 Rev.C 1/4 EMZ8 / UMZ8N Transistors z Electrical characteristics (Ta=25C) Tr1 Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 15 V IC = 10A Collector-emitter breakdown voltage BVCEO 12 V IC = 1mA Emitter-base breakdown voltage BVEBO 6 V IE = 10A Collector cutoff current ICBO 0.1 A VCB = 15V Emitter cutoff current IEBO 0.1 A VEB = 6V Collector-emitter saturation voltage VCE(sat) 0.1 0.25 V IC/IB = 200mA/10mA DC current transfer ratio hFE 270 680 VCE = 2V , IC = 10mA Transition frequency fT 260 MHz VCE = 2V , IE = 10mA , f = 100MHz Output capacitance Cob 6.5 pF VCB = 10V , IE = 0A , f = 1MHz Tr2 Parameter Symbol Min. Typ. Max. Unit Conditions BVCBO 60 V IC = 50A Collector-base breakdown voltage Collector-emitter breakdown voltage BVCEO 50 V IC = 1mA Emitter-base breakdown voltage BVEBO 7 V IE = 50A Collector cutoff current ICBO 0.1 A VCB = 60V Emitter cutoff current IEBO 0.1 A VEB = 7V Collector-emitter saturation voltage VCE(sat) 0.4 V IC/IB = 50mA/5mA DC current transfer ratio hFE 120 560 VCE = 6V , IC = 1mA Transition frequency fT 180 MHz VCE = 12V , IE = 2mA , f = 100MHz Output capacitance Cob 2 3.5 pF VCB = 12V , IE = 0A , f = 1MHz z Electrical characteristic curves <Tr1> 1000 200 1000 I =700A V =2V VCE=2V B CE I =600A 500 500 180 B 160 I =500A 200 B 200 Ta=125C Ta=125C Ta=25C 140 100 100 Ta=25C I =400A Ta= 40C B 120 Ta= 40C 50 50 100 I =300A B 20 20 80 I =200A 10 10 B 60 5 5 40 I =100A B Ta=25C 2 20 2 I =0A pulsed B 1 1 0 0 0.5 1.0 1.5 1 2 5 10 20 50 100 200 500 1000 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 COLLECTOR TO EMITTER VOLTAGE : V (V) COLLECTOR CURRENT : I (mA) BASE TO EMITTER VOLTAGE : VBE (V) CE C Fig.3 DC Current Gain vs. Fig.1 Grounded Emitter Propagation Fig.2 Typical Output Characteristics Collector Current Characteristics 1000 1000 10000 IC / IB=20 Ta=25C IC / IB=20 500 500 5000 Ta= 40C 200 Ta=25C 200 2000 Ta=125C 100 100 1000 Ta=125C Ta=25C 50 50 500 I / I =50 Ta= 40C C B IC / IB=20 20 20 200 IC / IB=10 10 10 100 5 5 50 2 2 20 1 1 10 1 2 5 10 20 50 100 200 500 1000 1 2 5 10 20 50 100 200 500 1000 1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 Collector-Emitter Saturation Fig.5 Collector-Emitter Saturation Fig.6 Base-Emitter Saturation Voltage vs. Voltage vs. Voltage vs.Collecter Current Collector Current () Collector Current () Rev.C 2/4 COLLECTOR SATURATION COLLECTOR CURRENT : IC (mA) VOLTAGE : VCE (sat) (V) COLLECTOR SATURATION VOLTAGE : VCE (sat) (mV) COLLECTOR CURRENT : IC (mA) BASER SATURATION VOLTAGE : VBE (sat) (mV) DC CURRENT GAIN : hFE