X-On Electronics has gained recognition as a prominent supplier of EMZ8T2R Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. EMZ8T2R Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

EMZ8T2R ROHM

EMZ8T2R electronic component of ROHM
EMZ8T2R ROHM
EMZ8T2R Bipolar Transistors - BJT
EMZ8T2R  Semiconductors

Images are for reference only
See Product Specifications
Part No. EMZ8T2R
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT DUAL PNP/NPN
Datasheet: EMZ8T2R Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4265 ea
Line Total: USD 0.43 
Availability - 6612
Ship by Wed. 16 Apr to Fri. 18 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
6612
Ship by Wed. 16 Apr to Fri. 18 Apr
MOQ : 1
Multiples : 1
1 : USD 0.4265
10 : USD 0.3709
100 : USD 0.258
500 : USD 0.199
1000 : USD 0.1581
2500 : USD 0.1455
8000 : USD 0.133
24000 : USD 0.1274

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Height
Length
Width
Brand
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the EMZ8T2R from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the EMZ8T2R and other electronic components in the Bipolar Transistors - BJT category and beyond.

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EMZ8 / UMZ8N Transistors Power management (dual transistors) EMZ8 / UMZ8N z Feature 1) Both a 2SA2018 chip and 2SC2412K chip in a EMT z Dimensions(Unit : mm) or UMT package. EMZ8 (6) (5) (4) z Equivalent circuits (1) (2) (3) ROHM : EMT6 Each lead has same dimensions EIAJ : (3) (2) (1) UMZ8N Tr2 Tr1 (6) (5) (4) (4) (5) (6) (1) (2) (3) ROHM : UMT6 Each lead has same dimensions EIAJ : SC-88 z Absolute maximum ratings (Ta=25C) Limits Parameter Symbol Unit Tr2 Tr1 Collector-base voltage VCBO 15 60 V Collector-emitter voltage VCEO 50 V 12 Emitter-base voltage VEBO V 6 7 IC 500 150 mA Collector current ICP 1 A Collector power dissipation PC 150 (TOTAL) mW Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C 120mW per element must not be exceeded. z Package, marking, and packaging specifications Part No. EMZ8 UMZ8N Package EMT6 UMT6 Marking Z8 Z8 Code T2R TR Basic ordering unit (pieces) 8000 3000 Rev.C 1/4 EMZ8 / UMZ8N Transistors z Electrical characteristics (Ta=25C) Tr1 Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 15 V IC = 10A Collector-emitter breakdown voltage BVCEO 12 V IC = 1mA Emitter-base breakdown voltage BVEBO 6 V IE = 10A Collector cutoff current ICBO 0.1 A VCB = 15V Emitter cutoff current IEBO 0.1 A VEB = 6V Collector-emitter saturation voltage VCE(sat) 0.1 0.25 V IC/IB = 200mA/10mA DC current transfer ratio hFE 270 680 VCE = 2V , IC = 10mA Transition frequency fT 260 MHz VCE = 2V , IE = 10mA , f = 100MHz Output capacitance Cob 6.5 pF VCB = 10V , IE = 0A , f = 1MHz Tr2 Parameter Symbol Min. Typ. Max. Unit Conditions BVCBO 60 V IC = 50A Collector-base breakdown voltage Collector-emitter breakdown voltage BVCEO 50 V IC = 1mA Emitter-base breakdown voltage BVEBO 7 V IE = 50A Collector cutoff current ICBO 0.1 A VCB = 60V Emitter cutoff current IEBO 0.1 A VEB = 7V Collector-emitter saturation voltage VCE(sat) 0.4 V IC/IB = 50mA/5mA DC current transfer ratio hFE 120 560 VCE = 6V , IC = 1mA Transition frequency fT 180 MHz VCE = 12V , IE = 2mA , f = 100MHz Output capacitance Cob 2 3.5 pF VCB = 12V , IE = 0A , f = 1MHz z Electrical characteristic curves <Tr1> 1000 200 1000 I =700A V =2V VCE=2V B CE I =600A 500 500 180 B 160 I =500A 200 B 200 Ta=125C Ta=125C Ta=25C 140 100 100 Ta=25C I =400A Ta= 40C B 120 Ta= 40C 50 50 100 I =300A B 20 20 80 I =200A 10 10 B 60 5 5 40 I =100A B Ta=25C 2 20 2 I =0A pulsed B 1 1 0 0 0.5 1.0 1.5 1 2 5 10 20 50 100 200 500 1000 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 COLLECTOR TO EMITTER VOLTAGE : V (V) COLLECTOR CURRENT : I (mA) BASE TO EMITTER VOLTAGE : VBE (V) CE C Fig.3 DC Current Gain vs. Fig.1 Grounded Emitter Propagation Fig.2 Typical Output Characteristics Collector Current Characteristics 1000 1000 10000 IC / IB=20 Ta=25C IC / IB=20 500 500 5000 Ta= 40C 200 Ta=25C 200 2000 Ta=125C 100 100 1000 Ta=125C Ta=25C 50 50 500 I / I =50 Ta= 40C C B IC / IB=20 20 20 200 IC / IB=10 10 10 100 5 5 50 2 2 20 1 1 10 1 2 5 10 20 50 100 200 500 1000 1 2 5 10 20 50 100 200 500 1000 1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 Collector-Emitter Saturation Fig.5 Collector-Emitter Saturation Fig.6 Base-Emitter Saturation Voltage vs. Voltage vs. Voltage vs.Collecter Current Collector Current () Collector Current () Rev.C 2/4 COLLECTOR SATURATION COLLECTOR CURRENT : IC (mA) VOLTAGE : VCE (sat) (V) COLLECTOR SATURATION VOLTAGE : VCE (sat) (mV) COLLECTOR CURRENT : IC (mA) BASER SATURATION VOLTAGE : VBE (sat) (mV) DC CURRENT GAIN : hFE

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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