X-On Electronics has gained recognition as a prominent supplier of FMW2T148 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. FMW2T148 Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

FMW2T148 ROHM

FMW2T148 electronic component of ROHM
Images are for reference only
See Product Specifications
Part No.FMW2T148
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT TRANS GP BJT NPN 50V 0.15A 5PIN
Datasheet: FMW2T148 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 0.882
10 : USD 0.6647
100 : USD 0.1739
1000 : USD 0.1323
3000 : USD 0.1184
9000 : USD 0.1134
24000 : USD 0.1109
45000 : USD 0.1109
99000 : USD 0.1058
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the FMW2T148 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the FMW2T148 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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EMW2 / EMX2 / EMX3 / UMW2N /UMX2N / Transistors UMX3N / FMW2 / IMX2 / IMX3 General purpose (dual transistors) EMW2 / EMX2 / EMX3 / UMW2N / UMX2N / UMX3N / FMW2 / IMX2 / IMX3 z Features 1) Two 2SC2412AK chips in a EMT or UMT or SMT package. z Equivalent circuit EMW2 / UMW2N FMW2 EMX2 / UMX2N IMX2 EMX3 / UMX3N IMX3 (3) (2) (1) (4) (5) (6) (3) (2) (1) (4) (5) (6) (3) (2) (1) (3) (4) (5) (4) (5) (2) (1) (4) (5) (6) (3) (2) (1) (4) (5) (6) (3) (2) (1) z Absolute maximum ratings (Ta = 25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 7 V Collector current IC 150 mA 1 EMW2 / EMX2 / EMX3 / UMW2N / UMX2N / UMX3N 150(TOTAL) Collector power PC mW dissipation FMW2 / IMX2 / IMX3 300(TOTAL) 2 Junction temperature Tj 150 C Storage temperature Tstg 55~+150 C 1 120mW per element must not be exceeded. 2 200mW per element must not be exceeded. z Electrical characteristics (Ta = 25C) Parameter Symbol Min. Typ. Max. Conditions Unit Collector-base breakdown voltage BVCBO 60 V IC=50 A Collector-emitter breakdown voltage BVCEO 50 V IC=1mA Emitter-base breakdown voltage BVEBO 7 V IE=50 A Collector cutoff current ICBO 0.1 A VCB=60V Emitter cutoff current IEBO 0.1 A VEB=7V Collector-emitter saturation voltage VCE(sat) 0.4 V IC/IB=50mA/5mA DC current transfer ratio hFE 120 560 VCE=6V, IC=1mA Transition frequency fT 180 MHz VCE=12V, IE=2mA, f=100MHz Output capacitance Cob 2 3.5 pF VCB=12V, IE=0mA, f=1kHz Transition frequency of the device. z Package, marking, and packaging specifications Type EMW2 EMX2 EMX3 UMW2N UMX2N UMX3N FMW2 IMX2 IMX3 Package EMT5 EMT6 EMT6 UMT5 UMT6 UMT6 SMT5 SMT6 SMT6 X3 W2 X2 X3 Marking W2 X2 X3 W2 X2 Code T2R T2R T2R TR TR TR T148 T108 T108 Basic ordering unit (pieces) 8000 8000 8000 3000 3000 3000 3000 3000 3000EMW2 / EMX2 / EMX3 / UMW2N /UMX2N / Transistors UMX3N / FMW2 / IMX2 / IMX3 z External dimensions (Units : mm) EMW2 EMX2 / EMX3 (4) (3) (4) (3) (5) (2) (2) ( ) ( ) ( ) ( ) 6 1 5 1 1.2 1.2 1.6 1.6 ROHM : EMT5 Each lead has same dimensions ROHM : EMT6 Each lead has same dimensions UMW2N UMX2N / UMX3N 1.25 1.25 2.1 2.1 0.1Min. 0.1Min. ROHM : UMT5 Each lead has same dimensions ROHM : UMT6 Each lead has same dimensions EIAJ : SC-88A EIAJ : SC-88 FMW2 IMX2 / IMX3 1.6 1.6 2.8 2.8 0.3to0.6 0.3to0.6 ROHM : SMT5 Each lead has same dimensions ROHM : SMT6 Each lead has same dimensions EIAJ : SC-74A EIAJ : SC-74 0.15 0.3 0.2 0.15 0.13 0.22 ( ) ( ) 1 2 (5) (4) 0to0.1 0to0.1 ( ) ( ) ( ) 5 4 3 (1) (3) 0.95 0.95 ( ) 2 0.8 1.9 0.5 0.5 0.7 0.65 0.65 2.9 1.1 1.0 0.5 0.9 1.3 1.6 2.0 0.15 0.3 0.2 0.15 0.13 0.22 (5) (4) (5) (6) ( ) ( ) 6 4 0to0.1 0to0.1 ( ) ( ) ( ) 3 2 1 ( ) ( ) 1 3 (2) 0.95 0.95 0.8 0.5 0.5 0.7 0.65 0.65 1.9 1.0 1.1 0.5 2.9 0.9 1.3 1.6 2.0

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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