FMY1AT148 ROHM

EMY1 / UMY1N / FMY1A Datasheet Emitter common (dual transistors) <For Tr1(PNP)> llOutline Parameter Value SOT-553 SOT-353 V -50V CEO I -150mA C EMY1 UMY1N <For Tr2(NPN)> (EMT5) (UMT5) Parameter Value SOT-25 V 50V CEO I 150mA C FMY1A (SMT5) llFeatures llInner circuit 1) Included a 2SA1037AK and a 2SC2412K EMY1 / UMY1N transistor in a EMT, UMT or SMT package. 2)Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. 3) PNP and NPN transistors have common emitters. 4) Mounting cost and area can be cut in half. FMY1A llApplication GENERAL PURPOSE SMALL SIGNAL AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-553 EMY1 1616 T2R 180 8 8000 Y1 (EMT5) SOT-353 UMY1N 2021 TR 180 8 3000 Y1 (UMT5) SOT-25 FMY1A 2928 T148 180 8 3000 Y1 (SMT5) www.rohm.com 1/11 20150825 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.EMY1 / UMY1N / FMY1A Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Tr1(PNP) Tr2(NPN) Unit V Collector-base voltage -60 60 V CBO Collector-emitter voltage V -50 50 V CEO V Emitter-base voltage -6 7 V EBO I Collector current -150 150 mA C *1 *2 EMY1/ UMY1N P 150 mW/Total D Power dissipation *1 FMY1A P 300 mW/Total D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) <For Tr1(PNP)> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown voltage BV I = -50A -60 - - V CBO C Collector-emitter breakdown BV I = -1mA -50 - - V CEO C voltage Emitter-base breakdown voltage BV I = -50A -6 - - V EBO E Collector cut-off current I V = -60V - - -100 nA CBO CB I Emitter cut-off current V = -6V - - -100 nA EBO EB Collector-emitter saturation voltage V I = -50mA, I = -5mA - - -500 mV CE(sat) C B DC current gain h V = -6V, I = -1mA 120 - 560 - FE CE C V = -12V, I = 2mA, CE E f Transition frequency - 140 - MHz T f = 100MHz V = -12V, I = 0A, CB E C Output capacitance - 4.0 5.0 pF ob f = 1MHz llElectrical characteristics (T = 25C) <For Tr2(NPN)> a Values Parameter Symbol Conditions Unit Min. Typ. Max. BV Collector-base breakdown voltage I = 50A 60 - - V CBO C Collector-emitter breakdown BV I = 1mA 50 - - V CEO C voltage Emitter-base breakdown voltage BV I = 50A 7 - - V EBO E I Collector cut-off current V = 60V - - 100 nA CBO CB I Emitter cut-off current V = 7V - - 100 nA EBO EB Collector-emitter saturation voltage V I = 50mA, I = 5mA - - 400 V CE(sat) C B DC current gain h V = 6V, I = 1mA 120 - 560 - FE CE C V = 12V, I = -2mA, CE E Transition frequency f - 180 - MHz T f = 100MHz V = 12V, I = 0A, CB E C Output capacitance - 2.0 3.5 pF ob f = 1MHz *1 Each terminal mounted on a reference land. *2 120mW per element must not be exceeded. *3 200mW per element must not be exceeded. www.rohm.com 2/11 20150825 - Rev.002 2015 ROHM Co., Ltd. All rights reserved.