FMY4A Transistors Power management (dual transistors) FMY4A z External dimensions (Unit : mm) z Feature 1) Both a 2SA1037AK chip and 2SC2412K chip in a FMY4A EMT or UMT or SMT package. SOT-25 1.6 z Equivalent circuits 2.8 FMY4A 0.3to0.6 (3) (4) (5) Each lead has same dimensions ROHM : SMT5 EIAJ : SC-74A Tr1 Tr2 (2) (1) z Absolute maximum ratings (Ta = 25C) Limits Parameter Symbol Unit Tr1 Tr2 60 60 V Collector-base voltage VCBO Collector-emitter voltage VCEO 50 50 V Emitter-base voltage VEBO 67 V Collector current IC 150 150 mA Collector power dissipation PC 300 (TOTAL) mW 1 Junction temperature Tj C 150 Storage temperature Tstg C 55 to +150 1 200mW per element must not be exceeded. z Package, marking, and packaging specifications Part No. FMY4A Package SMT5 Marking Y4 Code T148 Basic ordering unit (pieces) 3000 Rev.A 1/4 Not Recommended for New Designs 0.15 0.3 ( ) (2) 1 0to0.1 ( ) (4) 5 (3) 0.95 0.95 0.8 1.9 2.9FMY4A Transistors z Electrical characteristics (Ta=25C) Tr1 (PNP) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 60 VIC = 50A BVCEO 50 V IC = 1mA Collector-emitter breakdown voltage Emitter-base breakdown voltage BVEBO 6 V IE = 50A Collector cutoff current ICBO 0.1 A VCB = 60V Emitter cutoff current IEBO 0.1 A VEB = 6V Collector-emitter saturation voltage VCE(sat) 0.5 V IC/IB = 50mA/5mA DC current transfer ratio hFE 120 560 VCE = 6V , IC = 1mA Transition frequency fT 140 MHz VCE = 12V , IE = 2mA , f = 100MHz Output capacitance Cob 4 5 pF VCB = 12V , IE = 0A , f = 1MHz Transition frequency of the device. Tr2 (NPN) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 60 VIC = 50A Collector-emitter breakdown voltage BVCEO 50 V IC = 1mA Emitter-base breakdown voltage BVEBO 7 V IE = 50A Collector cutoff current ICBO 0.1 A VCB = 60V Emitter cutoff current IEBO 0.1 A VEB = 7V VCE(sat) 0.4 V IC/IB = 50mA/5mA Collector-emitter saturation voltage DC current transfer ratio hFE 120 560 VCE = 6V , IC = 1mA Transition frequency fT 180 MHz VCE = 12V , IE = 2mA , f = 100MHz Output capacitance Cob 2 3.5 pF VCB = 12V , IE = 0A , f = 1MHz Transition frequency of the device. z Electrical characteristics curves PNP Tr 35.0 100 50 10 VCE= 6V Ta=25C Ta=25C Ta=100C 31.5 25C 20 500 28.0 40C 80 450 8 400 10 24.5 350 300 5 21.0 250 6 60 17.5 200 2 14.0 150 4 40 1 10.5 100 0.5 7.0 20 2 50A 3.5A 0.2 IB=0 IB=0 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 0.4 0.8 1.2 1.6 2.0 0 1 2 3 4 5 COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO MITTER VOLTAGE : VCE (V) Fig.3 Grounded emitter output Fig.1 Grounded emitter propagation Fig.2 Grounded emitter output characteristics () characteristics () characteristics Rev.A 2/4 Not Recommended for New Designs COLLECTOR CURRENT : Ic (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA)