FMY5 Transistor General purpose(dual transistors) FMY5 z Features z External dimensions (Unit : mm) 1) Both the 2SA1514K and 2SC3906K chips in an SMT SMT5 package. 2.9 2) PNP and NPN chips are connecter in a common 1.1 1.9 0.95 0.95 0.8 emitter. (1) (2) z Circuit diagram (5) (4) (3) (3) (4) (5) 0.3 0.15 Each lead has same dimensions Tr2 Tr1 (2) (1) z Absolute maximum ratings (Ta=25C) Parameter SymbolSymbol Limits Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO 120 V Emitter-base voltage VEBO 5 V Collector current IC 50 mA Power dissipation PC 300(TOTAL) mW Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C 200mW per element must not be exceeded. PNP type negative symbols have been omitted. z Package, marking, and packaging specifications Part No. FMY5 Package SMT5 Marking Y5 Code T148 Basic ordering unit (pieces) 3000 Rev.B 1/4 1.6 2.8 0.3Min.3V 5V FMY5 Transistor z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 120 V IC = 50/50A Collector-emitter breakdown voltage BVCEO 120 V IC = 1/1mA Emitter-base breakdown voltage BVEBO 5 V IE = 50/50A Collector cutoff current ICBO 0.5 A VCB = 100/100V Emitter cutoff curren IEBO 0.5 A VEB = 4/4V DC current transfer ratio hFE 180 820 VCE = 6/6V, IC = 2/2mA Collector-emitter saturation voltage VCE(sat) 0.5 V IC = 10/10mA, IB = 1/1mA Transition frequency fT 140 MHz VCE = 12/12V, IE = 2/2mA, f = 100MHz Output capacitance Cob 3/4 pF VCB = 12/12V, IE = 0A, f = 1MHz Note:The slash denotes NPN/PNP. PNP type negative symbols have been omitted. Transition frequency of the device. z Electrical characteristics curves Tr1 10 50 Ta=25C Ta=25C Ta=25C VCE= 6V 20 500 8 10 VCE= 1V 5 6 200 2 4 1 100 0.5 5.0 2 50 2.5A 0.2 IB=0 0.1 0.2 0.5 1 2 5 10 20 50 0 4 8 12 16 20 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 COLLECTOR CURRENT : IC (mA) COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) Fig.3 DC current gain vs. collector current Fig.1 Ground emitter output characteristics Fig.2 Ground emitter propagation characteristics 20 Ta=25C Ta=25C Ta=25C VCE= 6V f=1MHZ IE=0A 0.5 500 10 Cob 5 0.2 200 IC/IB=50/1 100 0.1 20/1 2 10/1 50 0.05 1 0.2 0.5 1 2 5 10 20 50 0.5 1 2 5 10 20 50 0.5 1 2 5 10 20 COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.4 Collector-Emitter saturation voltage Fig.5 Transition frequency Fig.6 Collector output capacitance vs. collector current vs. emitter current vs. collector-base voltage Rev.B 2/4 12.5 10.0 7.5 15.0 17.5 20.0 25.0 22.5 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR CURRENT : IC (mA) TRANSITION FREQUENCY : fT (MHZ) COLLECTOR CURRENT : I (mA) C DC CURRENT GAIN : hFE COLLECTOR OUTPUT CAPACITANCE : Cob (pF)