IMN11FHT110 ROHM

Data Sheet AEC-Q101 Qualified Switching Diode IMN11FH Applications Dimensions (Unit : mm) Land size figure (Unit : mm) Ultra high speed switching 19 2.90.2 0.150.1 0.95 0.95 0.30.1 Each lead has same dimension 0.06 0.05 (4) (5) (6) Features 0.6 1) Small mold type. (SMD6) 0.45 0.35 0.35 0.45 2) High reliability. 00.1 (3) (2) (1) 0.8MIN. SMD6 1.90.2 0.80.1 0.95 0.95 1.10.2 Construction 0.1 Silicon epitaxial planar Structure ROHM : SMD6 JEDEC :S0T-457 JEITA : SC-74 week code 1Pin Mark Taping specifications (Unit : mm) 1.550.1 4.00.1 2.00.05 0 0.30.1 1.05MIN 3.20.1 4.00.1 1.350.1 Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit Reverse voltage (repetitive peak) V 80 V RM Reverse voltage (DC) V 80 V R Forward current (Single) I 300 mA FM Average rectified forward current (single) Io 100 mA Surge current (t=1us) (Single) I 4 A surge Power dissipation (TOTAL)(*1) 300 Pd mW Junction temperature 150 Tj C Storage temperature 55 to 150 Tstg C (*1) Not exceed 200mW per element. Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions V Forward voltage - - 1.2 V I =100mA F F Reverse current I V =70V - - 0.1 A R R Capacitance between terminals V =6V , f=1MHz Ct - - 3.5 pF R Reverse recovery time V =6V , I =5mA , RL=50 trr - - 4 ns R F www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.06 - Rev.B 1/2 0.2 1.6 0.1 2.80.2 0.30.6 3.20.1 00.5 5.50.2 1.0MIN. 3.50.05 1.750.1 8.00.2 3.20.1 2.4Data Sheet IMN11FH Ta=150 Ta=125 10000 100 10 Ta=75 f=1MHz 1000 Ta=125 Ta=75 Ta=25 100 10 Ta=150 Ta=25 10 Ta=-25 1 Ta=-25 1 1 0.1 0.1 0.01 0.1 0 100 200 300 400 500 600 700 800 900 1000 0 1020304050607080 0 5 10 15 20 REVERSE VOLTAGE:VR(V) FORWARD VOLTAGEVF(mV) REVERSE VOLTAGEVR(V) VF-IF CHARACTERISTICS VR-IR CHARACTERISTICS VR-Ct CHARACTERISTICS 1.5 950 100 Ta=25 1.4 90 Ta=25 Ta=25 VR=6V IF=100mA VR=80V 1.3 940 80 f=1MHz n=30pcs n=10pcs n=10pcs 1.2 70 1.1 930 60 1 50 0.9 920 40 AVE:9.655nA AVE:1.040pF 0.8 30 0.7 910 20 AVE:921.7m 0.6 10 0.5 900 0 VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP 20 10 5 Ta=25 9 VR=6V 1cyc Ifsm Ifsm 8 4 IF=5mA 15 RL=50 7 8.3ms 8.3ms n=10pcs 8.3ms 1cyc 6 3 10 5 4 2 3 5 2 1 1 AVE:3.50A AVE:1.93ns 0 0 0 1 10 100 IFSM DISRESION MAP trr DISPERSION MAP NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 10 1000 9 Rth(j-a) Ifsm 8 t 7 100 6 Rth(j-c) 5 10 Mounted on epoxy board 4 AVE:2.54kV IM=1mA IF=10mA 10 3 AVE:0.97kV 2 time 1ms 1 300us C=200pF C=100pF 0 1 1 R=0 R=1.5k 0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000 TIME:t(ms) TIME:t(s) ESD DISPERSION MAP IFSM-t CHARACTERISTICS Rth-t CHARACTERISTICS www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/2 2011.06 - Rev.B PEAK SURGE PEAK SURGE FORWARD VOLTAGE:VF(mV) FORWARD CURRENT:IF(mA) FORWARD CURRENT:IFSM(A) FORWARD CURRENT:IFSM(A) TRANSIENT REVERSE CURRENT:IR(nA) REVERSE RECOVERY TIME:trr(ns) REVERSE CURRENT:IR(nA) THAERMAL IMPEDANCE:Rth (/W) CAPACITANCE BETWEEN PEAK SURGE CAPACITANCE BETWEEN ELECTROSTATIC TERMINALS:Ct(pF) FORWARD CURRENT:IFSM(A) TERMINALS:Ct(pF) DISCHARGE TEST ESD(KV)