X-On Electronics has gained recognition as a prominent supplier of IMT1AT110 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. IMT1AT110 Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

IMT1AT110 ROHM

IMT1AT110 electronic component of ROHM
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See Product Specifications
Part No.IMT1AT110
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT DUAL PNP 50V 150MA SOT-457
Datasheet: IMT1AT110 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 0.0799 ea
Line Total: USD 0.8 
Availability - 807
Ship by Fri. 03 Jan to Wed. 08 Jan
MOQ: 10  Multiples: 10
Pack Size: 10

 IMT1AT110 More Buying Options & Price Grid(s)

Availability Price Quantity
807
Ship by Fri. 03 Jan to Wed. 08 Jan
MOQ : 10
Multiples : 10
10 : USD 0.0799
100 : USD 0.0655
300 : USD 0.0583
3000 : USD 0.0528
6000 : USD 0.0485
9000 : USD 0.0462

21133
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 0.3157
10 : USD 0.2046
100 : USD 0.1166
1000 : USD 0.1045
3000 : USD 0.0792
9000 : USD 0.0759
24000 : USD 0.0748

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Category
Brand Category
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IMT1AT110 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IMT1AT110 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

EMT1 / UMT1N / IMT1A Datasheet General purpose transistor (dual transistors) llOutline Parameter Tr1 and Tr2 EMT6 UMT6 V -50V CEO I -150mA C EMT1 UMT1N SC-107C SOT-363 SMT6 llFeatures 1)Two 2SA1037AK chips in a EMT, UMT or SMT package. IMT1A 2)Mounting possible with EMT3, UMT3 or SOT-457 SMT3automatic mounting machines. 3)Transistor elements are independent, llInner circuit eliminating interference. 4)Mounting cost and area can be cut in half. EMT1 / UMT1N IMT1A llApplication GENERAL PURPOSE SMALL SIGNAL AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) EMT1 EMT6 1616 T2R 180 8 8000 T1 UMT1N UMT6 2021 TN 180 8 3000 T1 IMT1A SMT6 2928 T110 180 8 3000 T1 www.rohm.com 1/8 20150515 - Rev.003 2015 ROHM Co., Ltd. All rights reserved.EMT1 / UMT1N / IMT1A Datasheet llAbsolute maximum ratings (T = 25C) a <For Tr1 and Tr2 in common> Parameter Symbol Values Unit V Collector-base voltage -60 V CBO V Collector-emitter voltage -50 V CEO V Emitter-base voltage -6 V EBO I Collector current -150 mA C *1 *2 P EMT1/ UMT1N 150 mW/Total D Power dissipation *1 *3 P IMT1A 300 mW/Total D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a <For Tr1 and Tr2 in common> Values Parameter Symbol Conditions Unit Min. Typ. Max. BV I = -50A Collector-base breakdown voltage -60 - - V CBO C Collector-emitter breakdown BV I = -1mA -50 - - V CEO C voltage BV I = -50A Emitter-base breakdown voltage -6 - - V EBO E I V = -60V Collector cut-off current - - -100 nA CBO CB I Emitter cut-off current V = -6V - - -100 nA EBO EB Collector-emitter saturation voltage V I = -50mA, I = -5mA - - -500 mV CE(sat) C B h V = -6V, I = -1mA DC current gain 120 - 560 - FE CE C V = -12V, I = 2mA, CE E Transition frequency f - 140 - MHz T f = 100MHz V = -12V, I = 0A, CB E C Output capacitance - 4 5 pF ob f = 1MHz *1 Each terminal mounted on a reference land. *2 120mW per element must not be exceeded. *3 200mW per element must not be exceeded. www.rohm.com 2/8 20150515 - Rev.003 2015 ROHM Co., Ltd. All rights reserved.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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