IMT3AT108 ROHM

EMT3 / IMT3A Transistors General purpose (dual transistors) EMT3 / IMT3A z External dimensions (Unit : mm) z Features 1) Two 2SA1037AK chips in a EMT or SMT package. EMT3 z Equivalent circuits (4) (3) (5) (2) EMT3 IMT3A ( ) ( ) 6 1 1.2 (3) (2) (1) (4) (5) (6) 1.6 Tr2 Tr2 Tr1 Tr1 (4) (5) (6) (3) (2) (1) Each lead has same dimensions ROHM : EMT6 IMT3A z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 6 V 1.6 Collector current IC 150 mA 2.8 1 EMT3 150(TOTAL) Collector power PC mW dissipation IMT3A 300(TOTAL) 2 0.3Min. Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Each lead has same dimensions 1 120mW per element must not be exceeded. 2 200mW per element must not be exceeded. ROHM : SMT6 EIAJ : SC-74 z Package, marking, and packaging specifications Type EMT3 IMT3A Package EMT6 SMT6 Marking T3 T3 Code T2R T108 Basic ordering unit (pieces) 8000 3000 z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 60 V IC=50A Collector-emitter breakdown voltage BVCEO 50 V IC=1mA Emitter-base breakdown voltage BVEBO 6 V IE=50A Collector cutoff current ICBO 0.1 A VCB=60V Emitter cutoff current IEBO 0.1 A VEB=6V Collector-emitter saturation voltage VCE(sat) 0.5 V IC/IB=50mA/5mA DC current transfer ratio hFE 120 560 VCE=6V, IC=1mA Transition frequency fT 140 MHz VCE=12V, IE=2mA, f=100MHz Output capacitance Cob 45 pF VCE=12V, IE=0A, f=1MHz Transition frequency of the device. Rev.A 1/2 0.15 0.3 0.22 0.13 ( ) ( ) ( ) 4 5 6 0~0.1 (3) (2) (1) 0.5 0.5 1.0 0.95 0.95 0.8 0.5 1.6 1.9 1.1 2.9Cib Cob EMT3 / IMT3A Transistors z Electrical characteristics curves 35.0 100 50 10 VCE= 6V Ta=25C Ta=25C Ta=100C 31.5 25C 20 500 40C 28.0 80 450 8 400 10 24.5 350 300 5 21.0 250 6 60 17.5 200 2 14.0 4 40 150 1 10.5 100 0.5 7.0 20 2 50A 3.5A 0.2 IB=0 IB=0 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 0.4 0.8 1.2 1.6 2.0 0 1 2 3 4 5 COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO MITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter propagation Fig.2 Grounded emitter output Fig.3 Grounded emitter output characteristics characteristics (I) characteristics (II) 500 1 500 VCE= 5V Ta=100C Ta=25C Ta=25C 3V 25C 1V 0.5 200 40C 200 0.2 100 IC/IB=50 100 0.1 20 50 10 50 0.05 VCE= 6V 0.2 0.5 1 2 5 10 20 50 100 0.2 0.5 1 2 5 10 20 50 100 0.2 0.5 1 2 5 10 20 50 100 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.5 DC current gain vs. Fig.4 DC current gain vs. Fig.6 Collector-emitter saturation collector current (I) collector current (II) voltage vs. collector current (I) 1000 20 1 lC/lB=10 Ta=25C Ta=25C VCE= 12V f=1MHz IE=0A 500 0.5 IC=0A 10 0.2 200 5 Ta=100C 25C 0.1 100 40C 2 0.05 50 0.5 1 2 5 10 20 0.5 12 5 10 20 50 100 0.2 0.5 1 2 5 10 20 50 100 COLLECTOR TO BASE VOLTAGE : VCB (V) COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) EMITTER TO BASE VOLTAGE : VEB (V) Fig.7 Collector-emitter saturation Fig.8 Gain bandwidth product vs. Fig.9 Collector output capacitance vs. voltage vs. collector current (II) collector-base voltage emitter current Emitter inputcapacitance vs. emitter-base voltage Rev.A 2/2 DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR CURRENT : Ic (mA) DC CURRENT GAIN : hFE TRANSITION FREQUENCY : fT (MHz) COLLECTOR CURRENT : IC (mA) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) COLLECTOR CURRENT : IC (mA) EMITTER INPUT CAPACITANCE : Cib (pF)