X-On Electronics has gained recognition as a prominent supplier of IMT18T110 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. IMT18T110 Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

IMT18T110 ROHM

IMT18T110 electronic component of ROHM
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See Product Specifications
Part No.IMT18T110
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT TRANS GP BJT PNP 12V 0.5A 6PIN
Datasheet: IMT18T110 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.495 ea
Line Total: USD 0.5 
Availability - 1928
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ: 1  Multiples: 1
Pack Size: 1

 IMT18T110 More Buying Options & Price Grid(s)

Availability Price Quantity
1928
Ship by Wed. 25 Dec to Fri. 27 Dec
MOQ : 1
Multiples : 1
1 : USD 0.495
10 : USD 0.4257
100 : USD 0.3179
500 : USD 0.2497
1000 : USD 0.1936
3000 : USD 0.1661
9000 : USD 0.1463
24000 : USD 0.1419
45000 : USD 0.1386

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Height
Length
Width
Brand
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the IMT18T110 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IMT18T110 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

EMT18 / UMT18N / IMT18 Datasheet General Purpose Transistor (Dual Transistor) llOutline Parameter Tr1 and Tr2 SOT-563 SOT-363 V -12V CEO I -500mA C EMT18 UMT18N (EMT6) (UMT6) SOT-457 llFeatures 1)Two 2SA2018 chips in a EMT or UMT or SMT package. 2)Mounting possible with EMT3 or UMT3 or IMT18 (SMT6) SMT3 automatic mounting machines. 3)Transistor elements are independent, llInner circuit eliminating interference. EMT18 / UMT18N IMT18 llApplication LOW FREQUENCY AMPLIFIER, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-563 EMT18 1616 T2R 180 8 8000 T18 (EMT6) SOT-363 UMT18N 2021 TR 180 8 3000 T18 (UMT6) SOT-457 IMT18 2928 T108 180 8 3000 T18 (SMT6) www.rohm.com 1/8 20151111 - Rev.001 2015 ROHM Co., Ltd. All rights reserved.EMT18 / UMT18N / IMT18 Datasheet llAbsolute maximum ratings (T = 25C) a <It is the same ratings for the Tr1 and Tr2> Parameter Symbol Values Unit V Collector-base voltage -15 V CBO Collector-emitter voltage V -12 V CEO V Emitter-base voltage -6 V EBO I -500 mA C Collector current *1 I -1 A CP *2 *3 P EMT18/ UMT18N 150 mW/Total D Power dissipation *2 *4 P IMT18 300 mW/Total D Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a <It is the same characteristics for the Tr1 and Tr2> Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown voltage BV I = -10A -15 - - V CBO C Collector-emitter breakdown BV I = -1mA -12 - - V CEO C voltage Emitter-base breakdown voltage BV I = -10A -6 - - V EBO E Collector cut-off current I V = -15V - - -100 nA CBO CB I Emitter cut-off current V = -6V - - -100 nA EBO EB Collector-emitter saturation voltage V I = -200mA, I = -10mA - -100 -250 mV CE(sat) C B DC current gain h V = -2V, I = -10mA 270 - 680 - FE CE C V = -2V, I = 10mA, CE E Transition frequency f - 260 - MHz T f = 100MHz V = -10V, I = 0A, CB E C Output capacitance - 6.5 - pF ob f = 1MHz *1 Pw=1ms Single Pulse *2 Each terminal mounted on a reference land *3 120mW per element must not be exceeded. *4 200mW per element must not be exceeded. www.rohm.com 2/8 20151111 - Rev.001 2015 ROHM Co., Ltd. All rights reserved.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

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RHM
ROHM Semicon
ROHM Semiconductor

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