X-On Electronics has gained recognition as a prominent supplier of IMX1T110 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. IMX1T110 Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

IMX1T110 ROHM

Hot IMX1T110 electronic component of ROHM
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See Product Specifications
Part No.IMX1T110
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT DUAL NPN 50V 150MA SOT-457
Datasheet: IMX1T110 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 0.079 ea
Line Total: USD 0.79 
Availability - 1072
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
8730
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.057
9000 : USD 0.057
12000 : USD 0.057
30000 : USD 0.057
45000 : USD 0.057

1072
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 10
Multiples : 10
10 : USD 0.079
100 : USD 0.0646
300 : USD 0.0574
3000 : USD 0.045
6000 : USD 0.0406
9000 : USD 0.0385

13446
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.3443
10 : USD 0.2233
100 : USD 0.1144
1000 : USD 0.1034
3000 : USD 0.0715
9000 : USD 0.0693
99000 : USD 0.0682

2609
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 10
Multiples : 10
10 : USD 0.1106
50 : USD 0.0868
250 : USD 0.0686
690 : USD 0.0658
3000 : USD 0.0644

44749
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 682
Multiples : 1
682 : USD 0.0597
2000 : USD 0.0587
3000 : USD 0.0585
6000 : USD 0.0582

16873
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 676
Multiples : 1
676 : USD 0.1453
1000 : USD 0.1407
2500 : USD 0.1365
5000 : USD 0.1327
10000 : USD 0.1295

2910
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 758
Multiples : 1
758 : USD 0.184

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
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We are delighted to provide the IMX1T110 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IMX1T110 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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The IMX1T110 is a dual NPN Bipolar Junction Transistor (BJT) manufactured by ROHM. It is housed in a SOT-457 package and has a maximum voltage rating of 50V and a maximum current rating of 150mA. This part is ideal for applications requiring high gain and low saturation voltage in signal processing, feedback, and current limiting circuits. The part features low input and output capacitance for high-speed switching applications, and low noise and good linearity for audio amplification. It is constructed with high-grade silicon, providing robust performance in a variety of operating conditions. It is also RoHS-compliant.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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