X-On Electronics has gained recognition as a prominent supplier of IMX1T110 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. IMX1T110 Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

IMX1T110 ROHM

IMX1T110 electronic component of ROHM
IMX1T110 ROHM
IMX1T110 Bipolar Transistors - BJT
IMX1T110  Semiconductors

Images are for reference only
See Product Specifications
Part No. IMX1T110
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT DUAL NPN 50V 150MA SOT-457
Datasheet: IMX1T110 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
10: USD 0.0992 ea
Line Total: USD 0.99 
Availability - 552
Ship by Wed. 05 Feb to Mon. 10 Feb
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
72750
Ship by Wed. 29 Jan to Tue. 04 Feb
MOQ : 3000
Multiples : 3000
3000 : USD 0.0611
6000 : USD 0.0602
12000 : USD 0.0569
15000 : USD 0.0566
45000 : USD 0.0548

552
Ship by Wed. 05 Feb to Mon. 10 Feb
MOQ : 10
Multiples : 10
10 : USD 0.0992
100 : USD 0.081
300 : USD 0.0618
3000 : USD 0.0435
6000 : USD 0.0393
9000 : USD 0.0373

13368
Ship by Mon. 27 Jan to Wed. 29 Jan
MOQ : 1
Multiples : 1
1 : USD 0.4092
10 : USD 0.2486
100 : USD 0.1199
1000 : USD 0.1089
3000 : USD 0.0748
9000 : USD 0.0693
99000 : USD 0.0682

2609
Ship by Mon. 27 Jan to Wed. 29 Jan
MOQ : 10
Multiples : 10
10 : USD 0.1078
50 : USD 0.0854
250 : USD 0.0756
260 : USD 0.0672
690 : USD 0.0644

44749
Ship by Wed. 29 Jan to Tue. 04 Feb
MOQ : 365
Multiples : 1
365 : USD 0.1781
388 : USD 0.1677
500 : USD 0.1326
1000 : USD 0.1184
2000 : USD 0.113
3000 : USD 0.0999
6000 : USD 0.0871
12000 : USD 0.0825

29100
Ship by Wed. 29 Jan to Tue. 04 Feb
MOQ : 3000
Multiples : 3000
3000 : USD 0.0974
18000 : USD 0.0855
27000 : USD 0.0796

16824
Ship by Wed. 29 Jan to Tue. 04 Feb
MOQ : 676
Multiples : 1
676 : USD 0.1454
1000 : USD 0.1407
2500 : USD 0.1365
5000 : USD 0.1276
10000 : USD 0.1245

2910
Ship by Wed. 29 Jan to Tue. 04 Feb
MOQ : 683
Multiples : 1
683 : USD 0.1439
1000 : USD 0.1392
2500 : USD 0.1352

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
LoadingGif
 
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We are delighted to provide the IMX1T110 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IMX1T110 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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The IMX1T110 is a dual NPN Bipolar Junction Transistor (BJT) manufactured by ROHM. It is housed in a SOT-457 package and has a maximum voltage rating of 50V and a maximum current rating of 150mA. This part is ideal for applications requiring high gain and low saturation voltage in signal processing, feedback, and current limiting circuits. The part features low input and output capacitance for high-speed switching applications, and low noise and good linearity for audio amplification. It is constructed with high-grade silicon, providing robust performance in a variety of operating conditions. It is also RoHS-compliant.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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