IMX25T110 ROHM

General purpose transistor (isolated dual transistors) IMX25 Features Dimensions (Unit : mm) 1) Two 2SD2704K chips in a SMT package. 2.90.2 +0.2 2) Mounting possible with SMT3 automatic mounting machine. 1.1 0.1 1.90.2 3) Transistor elements are independent, eliminating interference. 0.80.1 0.95 0.95 4) Mounting cost and area can be cut in half. (4) (5) (6) 0 to 0.1 Structure Epitaxial planar type (1) (3) (2) NPN silicon transistor +0.1 +0.1 0.15 0.3 0.06 0.05 All terminals have same dimensions The following characteristics apply to both Tr1 and Tr2. ROHM : SMT6 EIAJ : SC-74 Abbreviated symbol: X25 Absolute maximum ratings (Ta=25C) Inner circuit Parameter Symbol Limits Unit (4) (5) (6) Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 20 V Tr 1 Tr 2 Emitter-base voltage VEBO 25 V Collector current IC 300 mA (3) (2) (1) Power dissipation Pd 300(TOTAL) mW Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C 200mW per element must not be exceeded. Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 50 V IC=10A Collector-emitter breakdown voltage BVCEO 20 V IC=1mA Emitter-base breakdown voltage BVEBO 25 V IE=10A Collector cutoff current ICBO 0.1 A VCB=50V Emitter cutoff current IEBO 0.1 A VEB=25V Collector-emitter saturation voltage VCE(sat) 50 100 mV IC/IB=30mA/3mA DC current transfer ratio hFE 820 2700 VCE=2V, IC=4mA Transition frequency fT 35 MHz VCE=6V, IE=4mA, f=10MHz Output capacitance Cob 3.9 pF VCB=10V, IE=0A, f=1MHz Output On-resistance Ron 0.7 IB=5mA, Vi=100mVrms, f=1kHz Packaging specifications Packaging type Taping Code T110 Basic ordering unit (pieces) Part No. 3000 IMX25 www.rohm.com 2010.02 - Rev.B 1/3 c 2010 ROHM Co., Ltd. All rights reserved. +0.2 1.6 0.1 2.80.2 0.3 to 0.6 IMX25 Data Sheet Electrical characteristic curves 1000 1000 10000 VCE=2V VCE=6V VCE=2V Ta=125C Ta=125C Ta=125C 100 100 1000 25C 25C Ta=25C 10 40C 10 40C Ta= 40C 100 0.1 0.1 0.1 0.1 10 0 0.2 0.4 0.6 0.8 1 1.2 0 0.2 0.4 0.6 0.8 1 1.2 1 10 100 1000 COLLECTOR CURRENT : IC (mA) BASE TO EMITTER VOLTAGE : VBE(ON) (V) BASE TO EMITTER VOLTAGE : VBE(ON) (V) Fig.1 Grounded emitter propagation Fig.2 Grounded emitter propagation Fig.3 DC current gain characteristics ( ) characteristics ( ) vs. collector current ( ) 10000 10000 10000 VCE=6V IC/IB=10/1 IC/IB=20/1 Ta=125C 1000 1000 1000 Ta=25C Ta=125C Ta=125C Ta= 40C 100 100 100 Ta=25C Ta=25C 10 10 Ta= 40C Ta= 40C 10 1 1 1 10 100 1000 1 10 100 1000 1 10 100 1000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain Fig.5 Collector-emitter saturation voltage Fig.6 Collector-emitter saturation voltage vs. collector current ( ) vs. collector current ( ) vs. collector current ( ) 10000 10000 10000 IC/IB=50/1 IC/IB=10/1 IC/IB=20/1 1000 Ta=125C Ta= 40C Ta= 40C 100 1000 1000 Ta=25C Ta=25C Ta=25C 10 Ta= 40C Ta=125C Ta=125C 1 100 100 1 10 100 1000 1 10 100 1000 1 10 100 1000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage Fig.8 Base-emitter saturation voltage Fig.9 Base-emitter saturation voltage vs. collector current ( ) vs. collector current ( ) vs. collector current ( ) www.rohm.com 2010.02 - Rev.B 2/3 c 2010 ROHM Co., Ltd. All rights reserved. DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) COLLECTOR CURRENT : IC (mA) BASE SATURATION VOLTAGE : VBE(sat) (mV) COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) COLLECTOR CURRENT : IC (mA) BASE SATURATION VOLTAGE : VBE(sat) (mV) COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) DC CURRENT GAIN : hFE