X-On Electronics has gained recognition as a prominent supplier of IMX8T108 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. IMX8T108 Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

IMX8T108 ROHM

IMX8T108 electronic component of ROHM
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See Product Specifications
Part No.IMX8T108
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT DUAL NPN 120V 50MA SOT-457
Datasheet: IMX8T108 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.0821 ea
Line Total: USD 0.41 
Availability - 4803
Ship by Fri. 13 Dec to Wed. 18 Dec
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
78570
Ship by Fri. 06 Dec to Thu. 12 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.078
6000 : USD 0.078
9000 : USD 0.078
15000 : USD 0.078
30000 : USD 0.078

4803
Ship by Fri. 13 Dec to Wed. 18 Dec
MOQ : 5
Multiples : 5
5 : USD 0.0821
50 : USD 0.0728
150 : USD 0.068
500 : USD 0.0644
3000 : USD 0.0617
6000 : USD 0.0602

141
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 0.4653
10 : USD 0.2904
100 : USD 0.1452
1000 : USD 0.1287
3000 : USD 0.0935
9000 : USD 0.0891
24000 : USD 0.088
99000 : USD 0.0858

46560
Ship by Fri. 06 Dec to Thu. 12 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.1334
24000 : USD 0.1218
36000 : USD 0.1133
48000 : USD 0.1068

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
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We are delighted to provide the IMX8T108 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the IMX8T108 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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The IMX8T108 is an integrated circuit manufactured by ROHM. It is a dual NPN bipolar junction transistor (BJT) constructed with two N-type layers between a P-type substrate. It is designed for use in switching and low-power applications with a maximum voltage rating of 120V and a maximum continuous collector current of 50mA. It has a small outline package (SOT-457) with two pins for device connection. The features of the IMX8T108 include built-in emitter resistors, high-speed switching, low power dissipation, and protection from voltage surge.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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