IMX9 Transistors General purpose transistor (isolated dual transistors) IMX9 z z External dimensions (Units : mm) z z Features z z z z 1) Two 2SD2114K chips in a SMT package. 2.90.2 +0.2 1.1 2) Mounting possible with SMT3 automatic mounting 0.1 1.90.2 machine. 0.80.1 0.95 0.95 3) Transistor elements are independent, eliminating (4) (5) (6) interference. 0~0.1 4) Mounting cost and area can be cut in half. (2) (1) (3) +0.1 +0.1 0.15 0.3 0.06 0.05 All terminals have same dimensions z zz z Structure Epitaxial planar type ROHM : SMT6 EIAJ : SC-74 Abbreviated symbol: X9 NPN silicon transistor The following characteristics apply to both Tr1 and Tr2. z zz z Absolute maximum ratings (Ta = 25C) z zz z Equivalent circuit Parameter Symbol Limits Unit (4) (5) (6) Collector-base voltage VCBO 25 V Collector-emitter voltage VCEO 20 V Tr 1 Tr2 Emitter-base voltage VEBO 12 V Collector current IC 500 mA (3) (2) (1) Power dissipation Pd 300(TOTAL) mW Junction temperature Tj 150 C Storage temperature Tstg 55~+150 C 200mW per element must not be exceeded. z zz z Electrical characteristics (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 25 V IC=10A Collector-emitter breakdown voltage BVCEO 20 V IC=1mA Emitter-base breakdown voltage BVEBO 12 V IE=10A Collector cutoff current ICBO 0.5 A VCB=20V Emitter cutoff current IEBO 0.5 A VEB=10V Collector-emitter saturation voltage VCE(sat) 0.18 0.4 V IC/IB=500mA/20mA DC current transfer ratio hFE 560 2700 VCE=3V, IC=10mA Transition frequency fT 350 MHz VCE=10V, IE=50mA, f=100MHz Output capacitance Cob 8 pF VCB=10V, IE=0A, f=1MHz Output On-resistance Ron 0.8 IB=1mA, Vi=100mVrms, f=1kHz Not Recommended for New Designs +0.2 1.6 0.1 2.80.2 0.3~0.6IMX9 Transistors z zz z Packaging specifications Packaging type Taping Code T110 Part No. Basic ordering unit (pieces) 3000 IMX9 z zz z Electrical characteristic curves 2.0 1000 1000 Ta=25C 1.8mA 2.0mA VCE=3V 1.6A 1.6mA 500 Measured using 1.4mA pulse current. 2.0A 1.6 800 1.2mA 1.4A Ta=100C 1.8A 200 25C 1.0mA 1.2A 25C 100 0.8mA 1.2 600 1.0A 50 0.6mA 0.8A 20 0.8 400 0.4mA 0.6A 10 0.2mA 0.4A 5 0.4 200 Ta=25C 0.2A Measured using 2 pulse current. IB=0 IB=0mA 0 0 1 0 0.1 0.2 0.3 0.4 0.5 02468 10 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Grounded emitter output Fig.2 Grounded emitter output Fig.3 Grounded emitter propagation characteristics() characteristics () characteristics 10000 2000 10000 Ta=25C VCE=3V Ta=25C 5000 Measured using 5000 Measured using 1000 Measured using pulse current. pulse current. pulse current. 500 VCE=5V 2000 2000 1000 1000 200 Ta=100C 500 500 100 25C 3V 25C 1V 50 200 200 IC/IB=100 100 50 100 20 25 50 50 10 10 5 20 20 10 10 2 1 2 5 10 20 50 100 200 5001000 1 2 5 10 20 50 100 200 500 1000 1 2 5 10 20 50 100 200 5001000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector Fig.5 DC current gain vs. Fig.6 Collector-emitter saturation current () collector current () voltage vs. collector current () Not Recommended for New Designs DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (mA) DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (mA) COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) COLLECTOR CURRENT : IC (mA)