UMT2907A / SST2907A / MMST2907A Transistors PNP Medium Power Transistor (Switching) UMT2907A / SST2907A / MMST2907A z Features 1) BVCEO< -60V (IC=-10mA) z Dimensions (Unit : mm) 2) Complements the UMT2222A / SST2222A / UMT2907A MMST2222A. z Package, marking and packaging specifications (1) Emitter (2) Base Part No. ROHM : UMT3 UMT2907A SST2907A MMST2907A EIAJ : SC-70 (3) Collector Packaging type UMT3 SST3 SMT3 Marking R2F R2F R2F Code T106 T116 T146 SST2907A Basic ordering unit 3000 3000 3000 (pieces) z Absolute maximum ratings (Ta=25C) (1) Emitter Parameter Symbol Limits Unit (2) Base Collector-base voltage VCBO 60 V ROHM : SST3 (3) Collector Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 5 V Collector current IC 0.6 A MMST2907A UMT2907A, SST2907A, 0.2 W Collector power PC dissipation MMST2907A SST2907A 0.35 W Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Mounted on a 7 x 5 x 0.6mm ceramic substrate. (1) Emitter (2) Base ROHM : SMT3 EIAJ : SC-59 (3) Collector z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 60 V IC= 10A Collector-emitter breakdown voltage BVCEO 60 V IC= 10mA Emitter-base breakdown voltage BVEBO 5 V IE= 10A ICBO 100 VCB= 50V Collector cutoff current nA ICES 100 VCB= 30V Emitter cutoff current IEBO 100 nA VEB= 3V 0.4 IC/IB= 150mA/ 15mA Collector-emitter saturation voltage VCE(sat) V 1.6 IC/IB= 500mA/ 50mA 1.3 IC/IB= 150mA/ 15mA Base-emitter saturation voltage VBE(sat) V 2.6 IC/IB= 500mA/ 50mA 75 VCE= 10V, IC= 0.1mA 100 VCE= 10V, IC= 1mA 100 VCE= 10V, IC= 10mA DC current transfer ratio hFE 100 300 VCE= 10V, IC= 150mA 50 VCE= 10V, IC= 500mA Transition frequency fT 200 MHz VCE= 20V, IE=50mA, f=100MHz Collector output capacitance Cob 8 pF VCB= 10V, f=100kHz VEB= 2V, f=100kHz Emitter input capacitance Cib 30 pF Turn-on time ton 50 ns VCC= 30V, VBE(OFF)= 1.5V, IC= 150mA, IB1= 15mA Delay time td 10 ns VCC= 30V, VBE(OFF)= 1.5V, IC= 150mA, IB1= 15mA Rise time tr 40 ns VCC= 30V, VBE(OFF)= 1.5V, IC= 150mA, IB1= 15mA Turn-off time toff 100 ns VCC= 30V, IC= 150mA, IB1=IB2= 15mA Storage time tstg 80 ns VCC= 30V , IC= 150mA, IB1=IB2= 15mA Fall time tf 30 ns VCC= 30V, IC= 150mA, IB1=IB2= 15mA Rev.B 1/4 UMT2907A / SST2907A / MMST2907A Transistors z Electrical characteristic curves 100 1.8 Ta=25C 600 Ta=25C 1.6 IC / IB=10 1.4 500 1.2 400 1.0 50 300 0.8 200 0.6 0.4 100 0.2 1B=0A 0 0 0 5 10 1.0 10 100 1000 COLLECTOR-EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (mA) Fig.1 Grounded emitter output Fig.2 Base-emitter saturation characteristics voltage vs. collector current 1000 Ta=25C V =10V CE 100 1V 10 0.1 1.0 10 100 1000 COLLECTOR CURRENT : IC (mA) Fig.3 DC current gain vs. collector current ( I ) 1000 VCE=10V Ta=125C Ta=25C 100 Ta=55C 10 0.1 1.0 10 100 1000 COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( II ) Rev.B 2/4 DC CURRENT GAIN : hFE DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (mA) BASE-EMITTER SATURATION VOLTAGE : VBE (sat) (V)