MMST3904T146 ROHM

UMT3904 / SST3904 / MMST3904 Transistors NPN General Purpose Transistor UMT3904 / SST3904 / MMST3904 (NRND) z Features z Dimensions (Unit : mm) 1) BVCEO > 40V (IC = 1mA) UMT3904 2) Complements the UMT3906 / SST3906 / MMST3906. (1) Emitter ROHM : UMT3 (2) Base EIAJ : SC-70 (3) Collector SOT-323 SST3904 z Package, marking and packaging specifications Part No. UMT3904 SST3904 MMST3904 (NRND) Packaging type UMT3 SST3 SMT3 (1) Emitter Marking R1A R1A R1A (2) Base ROHM : SST3 Code T106 T116 T146 (3) Collector Basic ordering unit 3000 3000 3000 (pieces) MMST3904 (1) Emitter z Absolute maximum ratings (Ta = 25C) ROHM : SMT3 (2) Base EIAJ : SC-59 (3) Collector Parameter Symbol Limits Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 40 V Emitter-base voltage VEBO 6 V Collector current IC 0.2 A UMT3904, Collector SST3904, 0.2 W power PC MMST3904 dissipation W SST3904, MMST3904 0.35 Junction temperature Tj 150 C C Storage temperature Tstg 55 to +150 When mounted on a 7 x 5 x 0.6 mm ceramic board. z Electrical characteristics (Ta = 25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 60 - - V IC = 10A Collector-emitter breakdown voltage BVCEO 40 - - V IC = 1mA Emitter-base breakdown voltage BVEBO 6 - - V IE = 10A Collector cutoff current ICES - - 50 nA VCB = 30V Emitter cutoff current IEBO - - 50 nA VEB = 3V - - 0.2 IC/IB = 10mA/1mA Collector-emitter saturation voltage VCE(sat) V - - 0.3 IC/IB = 50mA/5mA 0.65 - 0.85 IC/IB = 10mA/1mA Base-emitter saturation voltage VBE(sat) V - - 0.95 IC/IB = 50mA/5mA 40 - - VCE = 1V , IC = 0.1mA 70 - - VCE = 1V , IC = 1mA DC current transfer ratio hFE 100 - 300 - VCE = 1V , IC = 10mA ~ 60 - - VCE = 1V , IC = 50mA 30 - - VCE = 1V , IC = 100mA Transition frequency fT 300 - - MHz VCE = 20V , IE = 10mA, f = 100MHz Collector output capacitance Cob - - 4 pF VCB = 10V , f = 100kHz Emitter input capacitance Cib - - 8 pF VEB = 0.5V , f = 100kHz Delay time td - - 35 ns VCC = 3V , VBE(OFF) = 0.5V , IC = 10mA , IB1 = 1mA Rise time tr - - 35 ns VCC = 3V , VBE(OFF) = 0.5V , IC = 10mA , IB1 = 1mA VCC = 3V , IC = 10mA , IB1 = IB2 = 1mA Storage time tstg - - 200 ns Fall time tf - - 50 ns VCC = 3V , IC = 10mA , IB1 = IB2 = 1mA Rev.B1/4 UMT3904 / SST3904 / MMST3904 Transistors z Electrical characteristic curves 10 Ta=25C 40 Ta=25C IC / IB=10 35 0.3 8 30 25 6 0.2 20 4 15 0.1 10 2 5.0 IB=0A 0 0 0 10 20 0.1 1.0 10 100 COLLECTOR CURRENT : IC (mA) COLLECTOR-EMITTER VOLTAGE : VCE (V) Fig.1 Grounded emitter output Fig.2 Collector-emitter saturation characteristics voltage vs. collector current 500 Ta=25C 5V 10V VCE=1V 3V 100 10 5 0.1 1.0 10 100 1000 COLLECTOR CURRENT : IC (mA) Fig.3 DC current gain vs. collector current ( ) 500 VCE=5V Ta=125C Ta=25C 100 Ta=55C 10 5 0.1 1.0 10 100 1000 COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( ) Rev.B 2/4 DC CURRENT GAIN : hFE DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (mA) COLLECTOR EMITTER SATURATION VOLTAGE : VCE(sat) (V)