+ + UMT3906/SST3906/MMST3906 Transistors PNP General Purpose Transistor UMT3906 / SST3906 / MMST3906 (NRND) z Dimensions (Unit : mm) z Features UMT3906 1) BV > 40V (I = 1mA) CEO C 2) Complements the T3904/SST3904/MMST3909. 3) Low capacitance. (1) Emitter (2) Base ROHM : UMT3 EIAJ : SC-70 (3) Collector SOT-323 z Package, marking, and packaging specifications SST3906 Type UMT3906 SST3906 MMST3906 (NRND) Packaging type UMT3 SST3 SMT3 Marking R2A R2A R2A (1) Emitter Code T106 T116 T146 (2) Base ROHM : SST3 (3) Collector Basic ordering unit (pieces) 3000 3000 3000 MMST3906 z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit (1) Emitter (2) Base Collector-base voltage VCBO 40 V ROHM : SMT3 (3) Collector EIAJ : SC-59 Collector-emitter voltage VCEO 40 V Emitter-base voltage VEBO 5 V Collector current IO 0.2 A UMT3906 6.2 W Collector Power SST3906,MMST3906 Pd dissipation SST3906,MMST3906 0.35 W Tj Junction temperature 150 C Storage temperature Tstg 55 to +150 C When mounted on a 7 5 0.6mm ceramic board. z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 40 V IC= 10A Collector-emitter breakdown voltage BVCEO 40 V IC= 1mA Emitter-base breakdown voltage BVEBO 5 V IE= 10A Collector cutoff current ICES 50 nA VCB= 30V Emitter cutoff current IEBO 50 nA VEB= 3V 0.25 IC/IB= 10mA/ 1mA Collector-emitter saturation voltage VCE(sat) V 0.4 IC/IB= 50mA/ 5mA 0.65 0.85 IC/IB= 10mA/ 1mA Base-emitter saturation voltage VBE(sat) V 0.95 IC/IB= 50mA/ 5mA 60 VCE= 1V, IC= 0.1mA 80 VCE= 1V, IC= 1mA DC current transfer ratio hFE 100300 VCE= 1V, IC= 10mA 60 VCE= 1V, IC= 50mA 30 VCE= 1V, IC= 100mA Transition frequency fT 250 MHz VCE= 20V, IE=10mA, f=100MHz Collector output capacitance Cob 4.5 pF VCB= 10V, f=100kHz, IE=0A Emitter input capacitance Cib 10 pF VCB= 0.5V, f=100kHz, IC=0A Delay time td 35 ns VCC= 3V, VBE(OFF)= 0.5V,IC= 10mA, IB1= 1mA Rise time tr 35 ns VCC= 3V, VBE(OFF)= 0.5V,IC= 10mA, IB1= 1mA Storage tiem tstg 225 ns VCC= 3V, IC= 10mA, IB1= IB2= 1mA Fall time tf 75 ns VCC= 3V, IC= 10mA, IB1= IB2= 1mA Rev.B1/4UMT3906/SST3906/MMST3906 Transistors z Electrical characteristics curves 10 Ta=25C IC / IB=10 50 45 Ta=25C 40 0.3 8 35 30 6 25 0.2 20 4 15 0.1 10 2 5 IB=0A 0 0 0 10 20 0.1 1.0 10 100 VCE-COLLECTOR-EMITTER VOLTAGE (V) IC EMITTER COLLECTOR CURRENT (mA) Fig.1 Grounded emitter output Fig.2 Collector-emitter saturation characteristics voltage vs. collector current 500 Ta=25C VCE=5V 100 3V 1V 10 5 0.1 1.0 10 100 1000 IC-COLLECTOR CURRENT (mA) Fig.3 DC current gain vs.collector current ( ) 500 VCE=5V Ta=125C Ta=25C 100 Ta= 55C 10 5 0.1 1.0 10 100 1000 IC-COLLECTOR CURRENT (mA) Fig.4 DC current gain vs. collector current ( ) Rev.B 2/4 hFE-DC CURRENT GAIN hFE-DC CURRENT GAIN IC-COLLECTOR CURRENT (mA) VCE(sat)COLLECTOR EMITTER SATURATION VOLTAGE (V)
