MMST4401T146 ROHM

+ + SST4401 / MMST4401 Transistors NPN Medium Power Transistor (Switching) SST4401 / MMST4401 z Features z Dimensions (Unit : mm) 1) BVCEO>40V (IC=1mA) SST4401 2) Complements the SST4403 / MMST4403. z Package, marking, and packaging specifications (1) Emitter (2) Base Part No. SST4401 MMST4401 ROHM : SST3 (3) Collector Packaging type SST3 SMT3 Marking R2X R2X MMST4401 Code T116 T146 Basic ordering unit (pieces) 3000 3000 (1) Emitter z Absolute maximum ratings (Ta=25C) ROHM : SMT3 (2) Base EIAJ : SC-59 (3) Collector Parameter Symbol Limits Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 40 V Emitter-base voltage VEBO 6 V Collector current IC 0.6 A 0.2 W Collector power dissipation PC 0.35 W Junction temperature Tj 150 C C Storage temperature Tstg 55 to +150 Mounted on a 7 5 0.6mm CERAMIC SUBSTRATE z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions BVCBO 60 IC=100A Collector-base breakdown voltage V Collector-emitter breakdown voltage V BVCEO 40 IC=1mA Emitter-base breakdown voltage BVEBO 6 V IE=100A Collector cutoff current ICBO 0.1 A VCB=35V Emitter cutoff current IEBO 0.1 A VEB=5V 0.4 IC/IB=150mA/15mA VCE(sat) Collector-emitter saturation voltage V 0.75 IC/IB=500mA/50mA 0.95 IC/IB=150mA/15mA Base-emitter saturation voltage VBE(sat) V 1.2 IC/IB=500mA/50mA 20 VCE=1V, IC=0.1mA 40 VCE=1V, IC=1mA hFE 80 VCE=1V, IC=10mA DC current transfer ratio 100 300 VCE=1V, IC=150mA 40 VCE=2V, IC=500mA Transition frequency fT 250 MHz VCE=10V, IE= 20mA, f=100MHz Collector output capacitance Cob 6.5 pF VCB=10V, f=100kHz Emitter input capacitance Cib 30 pF VEB=0.5V, f=100kHz Delay time td 15 ns VCC=30V, VEB(OFF)=2V, IC=150mA, IB1=15mA Rise time tr 20 ns VCC=30V, VEB(OFF)=2V, IC=150mA, IB1=15mA Storage time tstg 225 ns VCC=30V, IC=150mA, IB1=-IB2=15mA Fall time tf 30 ns VCC=30V, IC=150mA, IB1=-IB2=15mA Rev.B 1/3 SST4401 / MMST4401 Transistors z Electrical characteristic curves 100 1000 600 Ta=25C Ta=25C 500 400 VCE=10V 100 50 300 1V 200 100 IB=0A 10 0 0.1 1.0 10 100 1000 0 5 10 COLLECTOR CURRENT : Ic(mA) COLLECTOR-EMITTER VOLTAGE : VCE(V) Fig.3 DC current gain vs. collector current() Fig.1 Grounded emitter output characteristics 1000 Ta=25C VCE=10V IC / IB=10 0.3 Ta=125C 25C 0.2 100 55C 0.1 0 10 1.0 10 100 1000 0.1 1.0 10 100 1000 COLLECTOR CURRENT : Ic(mA) COLLECTOR CURRENT : Ic(mA) Fig.2 Collector-emitter saturation Fig.4 DC current gain vs. collector current() voltage vs. collector current 1.8 Ta=25C 1000 IC / IB=10 Ta=25C 1.6 VCE=10V f=1kHz 1.2 100 0.8 0.4 0 1.0 10 100 1000 10 COLLECTOR CURRENT : Ic(mA) 0.1 1.0 10 100 1000 COLLECTOR CURRENT : Ic(mA) Fig.6 Base-emitter saturation Fig.5 AC current gain vs. collector current voltage vs. collector current Rev.B 2/3 COLLECTOR EMITTER SATURATION VOLTAGE : VCE(sat)(V) AC CURRENT GAIN : hFE COLLECTOR CURRENT : Ic(mA) DC CURRENT GAIN : hFE DC CURRENT GAIN : hFE BASE EMITTER SATURATION VOLTAGE : VBE(sat)(V)