+ + SST4403 / MMST4403 Transistors PNP Medium Power Transistor (Switching) SST4403 / MMST4403 z Features z Dimensions (Unit : mm) 1) BVCEO = 40V (Min.) at IC= 1mA SST4403 2) Complements the SST4401 / MMST4401 (1) Emitter z Package, marking, and packaging specifications (2) Base ROHM : SST3 (3) Collector Part No. SST4403 MMST4403 Packaging type SST3 SMT3 MMST4403 Marking R2T R2T Code T116 T146 Basic ordering unit (pieces) 3000 3000 (1) Emitter ROHM : SMT3 (2) Base EIAJ : SC-59 (3) Collector z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 40 V VCEO 40 Collector-emitter voltage V Emitter-base voltage VEBO 6 V Collector current IC 0.6 A 0.2 W Collector power PC dissipation 0.35 W Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C Mounted on a 7 5 0.6mm CERAMIC SUBSTRATE z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 40 V IC= 100A Collector-emitter breakdown voltage BVCEO 40 V IC= 1mA Emitter-base breakdown voltage BVEBO 5 V IE= 100A Collector cutoff current ICBO 0.1 A VCB= 35V Emitter cutoff current IEBO 0.1 A VEB= 5V 0.4 IC/IB= 150mA/ 15mA Collector-emitter saturation voltage VCE(sat) V 0.75 IC/IB= 500mA/ 50mA 0.75 0.95 IC/IB= 150mA/ 15mA Base-emitter saturation voltage VBE(sat) V 1.3 IC/IB= 500mA/ 50mA 30 VCE= 1V, IC= 0.1mA 60 VCE= 1V, IC= 1mA 100 VCE= 1V, IC= 10mA DC current transfer ratio hFE 100 300 VCE= 1V, IC= 150mA 20 VCE= 2V, IC= 500mA Transition frequency fT 200 MHz VCE= 10V, IE=20mA, f=100MHz Collector output capacitance Cob 8.5 pF VCB= 10V, f=100kHz Emitter input capacitance Cib 30 pF VEB= 0.5V, f=100kHz Delay time td 15 ns VCC= 30V, VEB(OFF)= 2V, IC= 150mA, IB1= 15mA Rise time tr 20 ns VCC= 30V, VEB(OFF)= 2V, IC= 150mA, IB1= 15mA Storage time tstg 225 ns VCC= 30V, IC= 150mA, IB1= IB2= 15mA Fall time tf 30 ns VCC= 30V, IC= 150mA, IB1= IB2= 15mA Rev.C 1/3 SST4403 / MMST4403 Transistors z Electrical characteristic curves 100 1000 Ta=25C 600 Ta=25C 500 V =10V CE 400 100 50 1V 300 200 100 1B=0A 10 0 0.1 1.0 10 100 1000 0 5 10 COLLECTOR CURRENT : IC (mA) COLLECTOR-EMITTER VOLTAGE : VCE (V) Fig.3 DC current gain vs. collector current ( I ) Fig.1 Grounded emitter output characteristics 1000 1.8 VCE=10V Ta=25C 1.6 IC / IB=10 1.4 Ta=125C 1.2 Ta=25C 1.0 100 0.8 Ta= 55C 0.6 0.4 0.2 10 0 0.1 1.0 10 100 1000 1.0 10 100 1000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( II ) Fig.2 Base-emitter saturation voltage vs. collector current 1000 Ta=25C Ta=25C IC / IB=10 VCE=10V 0.3 f=1kHz 0.2 100 0.1 0 10 1.0 10 100 1000 0.1 1.0 10 100 1000 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.6 Collector-emitter saturation Fig.5 AC current gain vs. collector current voltage vs. collector current Rev.C 2/3 AC CURRENT GAIN : hFE BASE-EMITTER SATURATION VOLTAGE : VBE (sat) (V) COLLECTOR CURRENT : IC (mA) DC CURRENT GAIN : hFE DC CURRENT GAIN : hFE COLLECTOR-EMITTER SATURATION VOLTAGE : VCE (sat) (V)