X-On Electronics has gained recognition as a prominent supplier of QST9TR Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. QST9TR Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

QST9TR ROHM

QST9TR electronic component of ROHM
QST9TR ROHM
QST9TR Bipolar Transistors - BJT
QST9TR  Semiconductors

Images are for reference only
See Product Specifications
Part No. QST9TR
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: ROHM Semiconductor Bipolar Transistors - BJT BIPOLAR PNP -30-1A
Datasheet: QST9TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.835 ea
Line Total: USD 0.84 
Availability - 662
Ship by Fri. 02 May to Tue. 06 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
662
Ship by Fri. 02 May to Tue. 06 May
MOQ : 1
Multiples : 1
1 : USD 0.835
10 : USD 0.5763
100 : USD 0.3454
500 : USD 0.2728
1000 : USD 0.2464
3000 : USD 0.2178
6000 : USD 0.2013
9000 : USD 0.2002

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Height
Length
Continuous Collector Current
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the QST9TR from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the QST9TR and other electronic components in the Bipolar Transistors - BJT category and beyond.

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QST9 Datasheet Middle Power Transistor (-30V /-1A) llOutline Parameter Tr1 and Tr2 SOT-457T V -30V CEO SC-95 I -1A C TSMT6 llFeatures llInner circuit 1)Collector current is large. 2)Collector saturation voltage is low. V : max.-350mV CE(sat) at I =-500mA/I =-25mA C B llApplication LOW FREQUENCY AMPLIFIER llPackaging specifications Package Taping Reel size Tape width Quantity Part No. Package Marking size code (mm) (mm) (pcs) SOT-457T QST9 2928 TR 180 8 3000 T09 (TSMT6) www.rohm.com 1/6 20190527 - Rev.002 2019 ROHM Co., Ltd. All rights reserved. QST9 Datasheet llAbsolute maximum ratings (T = 25C) <It is the same ratings for the Tr1 and Tr2> a Parameter Symbol Values Unit V Collector-base voltage -30 V CBO V Collector-emitter voltage -30 V CEO V Emitter-base voltage -6 V EBO I -1 A C Collector current *1 I -2 A CP *2 P 0.5 W/Total D Power dissipation *3*4 P 1.25 W/Total D Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) <It is the same characteristics for the Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -10A -30 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -30 - - V CEO C voltage Emitter-base breakdown voltage BV I = -10A -6 - - V EBO E Collector cut-off current I V = -30V - - -100 nA CBO CB Emitter cut-off current I V = -6V - - -100 nA EBO EB Collector-emitter saturation voltage V I = -500mA, I = -25mA - -150 -350 mV CE(sat) C B h DC current gain V = -2V, I = -100mA 270 - 680 - FE CE C V = -2V, I = 100mA, CE E f Transition frequency - 320 - MHz T f = 100MHz V = -10V, I = 0A, CB E C Output capacitance - 7 - pF ob f = 1MHz *1 Pw=1ms, Single pulse *2 Each terminal mounted on a reference land. *3 Mounted on a ceramic board(25250.8mm). *4 900mW per element must not be exceeded. www.rohm.com 2/6 20190527 - Rev.002 2019 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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