X-On Electronics has gained recognition as a prominent supplier of QSX1TR Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. QSX1TR Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

QSX1TR ROHM

QSX1TR electronic component of ROHM
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See Product Specifications
Part No.QSX1TR
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Trans GP BJT NPN 12V 6A 6-Pin TSMT T/R
Datasheet: QSX1TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
167: USD 0.236 ea
Line Total: USD 39.41 
Availability - 2822
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ: 167  Multiples: 1
Pack Size: 1

 QSX1TR More Buying Options & Price Grid(s)

Availability Price Quantity
2822
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 167
Multiples : 1
167 : USD 0.236
200 : USD 0.2345
500 : USD 0.2251
1000 : USD 0.2219
2000 : USD 0.2203

1736
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 397
Multiples : 1
397 : USD 0.222

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the QSX1TR from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the QSX1TR and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

QSX1 Low frequency amplifier (12V, 6A) Datasheet llOutline SOT-457T Parameter Value SC-95 V 12V CEO I 6A C TSMT6 llFeatures llInner circuit 1)High current 2)Low V CE(sat) V 200mV CE(sat) at I =3A/I =60mA C B llApplication LOW FREQUENCY AMPLIFIER llPackaging specifications Package Taping Reel size Tape width Quantity Part No. Package Marking size code (mm) (mm) (pcs) SOT-457T QSX1 2928 TR 180 8 3000 X01 (TSMT6) www.rohm.com 1/6 20190527 - Rev.002 2019 ROHM Co., Ltd. All rights reserved. QSX1 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 15 V CBO V Collector-emitter voltage 12 V CEO V Emitter-base voltage 6 V EBO I 6 A C Collector current *1 I 10 A CP *2 P 0.5 W D Power dissipation *3 P 1.25 W D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 10A 15 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 12 - - V CEO C voltage BV I = 10A Emitter-base breakdown voltage 6 - - V EBO E I V = 15V Collector cut-off current - - 100 nA CBO CB I Emitter cut-off current V = 6V - - 100 nA EBO EB *4 Collector-emitter saturation voltage I = 3A, I = 60mA V - 80 200 mV C B CE(sat) *4 DC current gain V = 2V, I = 500mA 270 - 680 - h CE C FE V = 2V, I = -500mA, CE E *4 Transition frequency - 250 - MHz f T f = 100MHz V = 10V, I = 0A, CB E C Output capacitance - 80 - pF ob f = 1MHz *1 Pw=1ms, Single pulse *2 Each terminal mounted on a reference land. *3 Mounted on a ceramic board.(25250.8mm) *4 Pulsed www.rohm.com 2/6 20190527 - Rev.002 2019 ROHM Co., Ltd. All rights reserved.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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