QSZ2 Datasheet Middle power driver(-30V,-1.5A / 30V,1.5A) <For Tr1(PNP)> llOutline Parameter Value SOT-25T V -30V CEO I -1.5A C <For Tr2(NPN)> TSMT5 Parameter Value V 30V CEO I 1.5A C llFeatures llInner circuit 1)Low V CE(sat) V =-370mV (Max.) (I /I =-1A/-50mA) CE(sat) C B V =350mV (Max.) (I /I =1A/50mA) CE(sat) C B 2)Small package. llApplication Low frequency amplifier llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-25T QSZ2 2928 TR 180 8 3000 Z02 (TSMT5) llAbsolute maximum ratings (T = 25C) a Parameter Symbol Tr1(PNP) Tr2(NPN) Unit V Collector-base voltage -30 30 V CBO V Collector-emitter voltage -30 30 V CEO Emitter-base voltage V -6 6 V EBO I -1.5 1.5 A C Collector current *1 I -5 5 A CP *2 P 0.5 W D Power dissipation *3*4 P 1.25 W D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg www.rohm.com 1/9 20190412 - Rev.001 2019 ROHM Co., Ltd. All rights reserved.QSZ2 Datasheet llElectrical characteristics (T = 25C) <For Tr1(PNP)> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -10A -30 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -30 - - V CEO C voltage BV I = -10A Emitter-base breakdown voltage -6 - - V EBO E I V = -30V Collector cut-off current - - -100 nA CBO CB I V = -6V Emitter cut-off current - - -100 nA EBO EB Collector-emitter saturation voltage V I = -1A, I = -50mA - -190 -370 mV CE(sat) C B h DC current gain V = -2V, I = -100mA 270 - 680 - FE CE C V = -2V, I = 100mA, CE E f Transition frequency - 280 - MHz T f = 100MHz V = -10V, I = 0A, CB E C Output capacitance - 13 - pF ob f = 1MHz llElectrical characteristics (T = 25C) <For Tr2(NPN)> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 10A 30 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 30 - - V CEO C voltage BV I = 10A Emitter-base breakdown voltage 6 - - V EBO E I V = 30V Collector cut-off current - - 100 nA CBO CB I Emitter cut-off current V = 6V - - 100 nA EBO EB Collector-emitter saturation voltage V I = 1A, I = 50mA - 140 350 mV CE(sat) C B h DC current gain V = 2V, I = 100mA 270 - 680 - FE CE C V = 2V, I = -100mA, CE E f Transition frequency - 300 - MHz T f = 100MHz V = -10V, I = 0A, CB E C Output capacitance - 11 - pF ob f = 1MHz *1 Pw=1ms Single pulse *2 Each terminal mounted on a reference land. t *3 Mounted on a 25mm25mm 0.8mm ceramic board. *4 0.9W per element must not be exceeded. www.rohm.com 2/9 20190412 - Rev.001 2019 ROHM Co., Ltd. All rights reserved.