X-On Electronics has gained recognition as a prominent supplier of QSZ2TR Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. QSZ2TR Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

QSZ2TR ROHM

Hot QSZ2TR electronic component of ROHM
QSZ2TR ROHM
QSZ2TR Bipolar Transistors - BJT
QSZ2TR  Semiconductors

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See Product Specifications
Part No. QSZ2TR
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: ROHM Semiconductor Bipolar Transistors - BJT TRANS GP BJT NPN PNP 30V 1.5A 5PIN
Datasheet: QSZ2TR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2828 ea
Line Total: USD 0.28 
Availability - 633
Ship by Tue. 13 May to Fri. 16 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
633
Ship by Tue. 13 May to Fri. 16 May
MOQ : 1
Multiples : 1
1 : USD 0.2828
10 : USD 0.221
30 : USD 0.1944
100 : USD 0.1614
500 : USD 0.0989
1000 : USD 0.093

2770
Ship by Fri. 02 May to Tue. 06 May
MOQ : 1
Multiples : 1
1 : USD 0.8137
10 : USD 0.5325
100 : USD 0.322
500 : USD 0.242
1000 : USD 0.22
3000 : USD 0.1749
9000 : USD 0.1672

2338
Ship by Fri. 02 May to Tue. 06 May
MOQ : 1
Multiples : 1
1 : USD 0.882
10 : USD 0.5712
86 : USD 0.2184
235 : USD 0.2072
15000 : USD 0.2002

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the QSZ2TR from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the QSZ2TR and other electronic components in the Bipolar Transistors - BJT category and beyond.

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QSZ2 Datasheet Middle power driver(-30V,-1.5A / 30V,1.5A) <For Tr1(PNP)> llOutline Parameter Value SOT-25T V -30V CEO I -1.5A C <For Tr2(NPN)> TSMT5 Parameter Value V 30V CEO I 1.5A C llFeatures llInner circuit 1)Low V CE(sat) V =-370mV (Max.) (I /I =-1A/-50mA) CE(sat) C B V =350mV (Max.) (I /I =1A/50mA) CE(sat) C B 2)Small package. llApplication Low frequency amplifier llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-25T QSZ2 2928 TR 180 8 3000 Z02 (TSMT5) llAbsolute maximum ratings (T = 25C) a Parameter Symbol Tr1(PNP) Tr2(NPN) Unit V Collector-base voltage -30 30 V CBO V Collector-emitter voltage -30 30 V CEO Emitter-base voltage V -6 6 V EBO I -1.5 1.5 A C Collector current *1 I -5 5 A CP *2 P 0.5 W D Power dissipation *3*4 P 1.25 W D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg www.rohm.com 1/9 20190412 - Rev.001 2019 ROHM Co., Ltd. All rights reserved.QSZ2 Datasheet llElectrical characteristics (T = 25C) <For Tr1(PNP)> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -10A -30 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -30 - - V CEO C voltage BV I = -10A Emitter-base breakdown voltage -6 - - V EBO E I V = -30V Collector cut-off current - - -100 nA CBO CB I V = -6V Emitter cut-off current - - -100 nA EBO EB Collector-emitter saturation voltage V I = -1A, I = -50mA - -190 -370 mV CE(sat) C B h DC current gain V = -2V, I = -100mA 270 - 680 - FE CE C V = -2V, I = 100mA, CE E f Transition frequency - 280 - MHz T f = 100MHz V = -10V, I = 0A, CB E C Output capacitance - 13 - pF ob f = 1MHz llElectrical characteristics (T = 25C) <For Tr2(NPN)> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 10A 30 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 30 - - V CEO C voltage BV I = 10A Emitter-base breakdown voltage 6 - - V EBO E I V = 30V Collector cut-off current - - 100 nA CBO CB I Emitter cut-off current V = 6V - - 100 nA EBO EB Collector-emitter saturation voltage V I = 1A, I = 50mA - 140 350 mV CE(sat) C B h DC current gain V = 2V, I = 100mA 270 - 680 - FE CE C V = 2V, I = -100mA, CE E f Transition frequency - 300 - MHz T f = 100MHz V = -10V, I = 0A, CB E C Output capacitance - 11 - pF ob f = 1MHz *1 Pw=1ms Single pulse *2 Each terminal mounted on a reference land. t *3 Mounted on a 25mm25mm 0.8mm ceramic board. *4 0.9W per element must not be exceeded. www.rohm.com 2/9 20190412 - Rev.001 2019 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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