QSZ4 Transistors General purpose transistor (isolated transistor and diode) QSZ4 A 2SB1706 and a 2SD2671 are housed independently in a TSMT5 package. z Dimensions (Unit : mm) z Applications DC / DC converter QSZ4 Motor driver (5) (4) z Features 1) Low VCE(sat) 2) Small package (1) (2) (3) ROHM : TSMT5 Each lead has same dimensions z Structure Abbreviated symbol : Z04 Silicon epitaxial planar transistor z Equivalent circuit (5) (4) Tr1 Tr2 (1) (2) (3) z Packaging specifications Type QSZ4 Package TSMT5 Marking Z04 Code TR Basic ordering unit(pieces) 3000 Rev.B 1/4 QSZ4 Transistors z Absolute maximum ratings (Ta=25C) Tr1 Parameter Symbol Limits Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 6 V IC 2 A Collector current 1 ICP 4 A 2 500 mW/Total 3 Power dissipation Pc 1.25 W/Total 0.9 W/Element 3 Junction temperature Tj 150 C Range of storage temperature Tstg 55 to +150 C 1 Single pulse, Pw=1ms. 2 Each terminal mounted on a recommended land. t 3 Mounted on a 2525 0.8mm ceramic substrate. Tr 2 Parameter Symbol Limits Unit Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 30 V Emitter-base voltage VEBO 6 V IC 2 A Collector current 1 ICP 4 A 2 500 mW/Total 3 Power dissipation Pc 1.25 W/Total 0.9 W/Element 3 Junction temperature Tj 150 C Range of storage temperature Tstg 55 to +150 C 1 Single pulse, Pw=1ms. 2 Each terminal mounted on a recommended land. t 3 Mounted on a 2525 0.8mm ceramic substrate. z Electrical characteristics (Ta=25C) Tr1 Parameter Symbol Min. Typ. Max. Unit Conditions BVCBO 30 V IC= 10A Collector-base breakdown voltage Collector-emitter breakdown voltage BVCEO 30 V IC= 1mA Emitter-base breakdown voltage BVEBO 6 V IE= 10A Collector cutoff current ICBO 100 nA VCB= 30V Emitter cutoff current IEBO 100 nA VEB= 6V Collector-emitter saturation voltage VCE(sat) 180 370 mV IC= 1.5A, IB= 75mA DC current gain hFE 270 680 VCE= 2V, IC= 200mA Transition frequency fT 280 MHz VCE= 2V, IE=200mA, f=100MHz Cob 20 pF VCB= 10V, IE=0A, f=1MHz Collector output capacitance Pulsed Tr 2 Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 30 V IC=10A BVCEO 30 V IC=1mA Collector-emitter breakdown voltage Emitter-base breakdown voltage BVEBO 6 V IE=10A Collector cutoff current ICBO 100 nA VCB=30V Emitter cutoff current IEBO 100 nA VEB=6V Collector-emitter saturation voltage VCE(sat) 180 370 mV IC=1.5A, IB=75mA hFE 270 680 VCE=2V, IC=200mA DC current gain Transition frequency fT 280 MHz VCE=2V, IE= 200mA, f=100MHz VCB=10V, IE=0A, f=1MHz Collector output capacitance Cob 20 pF Pulsed Rev.B 2/4