RB085T-40NZC9 ROHM

Schottky barrier diode Data Sheet RB085T-40NZ Applications Dimensions (Unit : mm) Structure Switching power supply Features 1) Cathode common type. (1) (2) (3) (TO-220) 2) Low I R 3) High reliability 8 Construction Silicon epitaxial planer Packing Dimensions (Unit : mm) 7 540 34.5 Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit 45 Reverse voltage (repetitive peak) V V RM Reverse voltage (DC) V 40 V R Average rectified forward current (*1) Io 10 A Forward current surge peak (60Hz / 1cyc) (*1) I 100 A FSM Junction temperature 150 Tj C Storage temperature Tstg 40 to 150 C (*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=132 C Electrical characteristic (Ta=25C) Parameter Conditions Symbol Min. Typ. Max. Unit V Forward voltage - - 0.55 V I =5A F F Reverse current I - - 200 V =40V A R R Thermal impedance jc - - 2.5 C/W junction to case www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2016.09 - Rev.A 1/3RB085T-40NZ Data Sheet Electrical characteristic curves Ta=150C Ta=125C 10 1000 100000 Ta=150 C f=1MHz 10000 Ta=125 C Ta=75C Ta=-25C 1000 1 100 Ta=75 C 100 Ta=25C Ta=25C 10 0.1 10 Ta=-25C 1 0.1 0.01 1 0.01 0 100 200 300 400 500 600 0 5 10 15 20 25 30 0 10203040 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE:V (V) F REVERSE VOLTAGE : V (V) R R V -Ct CHARACTERISTICS V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R R 800 530 300 790 Ta=25C Ta=25C Ta=25C f=1MHz I =5A F 250 780 V =40V 520 R V =0V R n=30pcs n=30pcs 770 n=10pcs 200 760 510 750 150 AVE:728.1pF 740 500 AVE:504.0mV 100 730 AVE:20.3uA 490 720 50 710 480 0 700 V DISPERSION MAP I DISPERSION MAP F R Ct DISPERSION MAP 30 300 1000 Ta=25C Ifsm I =0.5A 25 F 250 Ifsm 1cyc I =1A R 8.3ms 8.3ms Irr=0.25*I R 20 200 8.3ms n=10pcs 1cyc 15 150 100 10 AVE:156.0A 100 5 AVE:12.30ns 50 0 0 10 1 10 100 NUMBER OF CYCLES trr DISPERSION MAP I DISPERSION MAP FSM I -CYCLE CHARACTERISTICS FSM 1000 Mounted on epoxy board 100 15 IM=100mA I =1A F Ifsm t D=1/2 DC Rth(j-a) 1ms Sin(=180) time 10 10 300us 100 1 Rth(j-c) 5 10 0.1 0 110 100 0.001 0.01 0.1 1 10 100 1000 0 5 10 15 20 AVERAGE RECTIFIED TIME:t(ms) TIME:t(s) FORWARD CURRENT : Io(A) I -t CHARACTERISTICS Rth-t CHARACTERISTICS FSM Io-Pf CHARACTERISTICS www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2/3 2016.09 - Rev.A PEAK SURGE FORWARD VOLTAGE:V (mV) F FORWARD CURRENT:I (A) F PEAK SURGE FORWARD CURRENT:I (A) FSM FORWARD CURRENT:I (A) FSM REVERSE CURRENT:I (uA) TRANSIENT R REVERSE CURRENT:I (uA) REVERSE RECOVERY TIME:trr(ns) R THAERMAL IMPEDANCE:Rth (/W) PEAK SURGE CAPACITANCE BETWEEN CAPACITANCE BETWEEN FORWARD POWER FORWARD CURRENT:I (A) TERMINALS:Ct(pF) TERMINALS:Ct(pF) FSM DISSIPATION:Pf(W)