RB085T-60 ROHM

Data Sheet Schottky barrier diode RB085T-60 Applications Dimensions (Unit : mm) Structure Switching power supply Features 1) Cathode common type. (1) (2) (3) (TO-220) 2) Low I R 3) High reliability Construction Silicon epitaxial planer Absolute maximum ratings (Ta=25C) Parameter Limits Symbol Unit Reverse voltage (repetitive peak) V 60 V RM Reverse voltage (DC) V 60 V R 10 Average rectified forward current (*1) Io A 100 Forward current surge peak (60Hz / 1cyc) (*1) I A FSM Junction temperature Tj 150 C Storage temperature Tstg 40 to 150 C (*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=130 C Electrical characteristic (Ta=25C) Parameter Conditions Symbol Min. Typ. Max. Unit Forward voltage V - - 0.58 V I =5A F F I Reverse current - - 300 A V =60V R R Thermal impedance - - 2.5 junction to case jc C/W www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2011.04 - Rev.D 1/3 Not Recommended for New DesignsRB085T-60 Data Sheet Electrical characteristic curves Ta=150C Ta=125 C 10 1000 100000 f=1MHz Ta=150 C 10000 Ta=75 C Ta=125 C 1000 1 100 Ta=75 C Ta=25 C 100 Ta=25 C Ta=-25 C 10 0.1 10 Ta=-25 C 1 0.1 0.01 0.01 1 0 100 200 300 400 500 600 0 5 10 15 20 25 30 0 102030 405060 REVERSE VOLTAGE : V (V) FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) R F R V -I CHARACTERISTICS V -I CHARACTERISTICS V -Ct CHARACTERISTICS F F R R R 800 550 300 Ta=25 C Ta=25 C Ta=25C 790 f=1MHz f=1MHz I =5A F 250 V =0V 780 R 540 V =30V R n=30pcs n=10pcs n=30pcs 770 200 760 530 750 150 520 740 100 AVE:36.7uA 730 720 510 50 AVE:532.6mV AVE:738.5pF 710 500 0 700 V DISPERSION MAP I DISPERSION MAP F R Ct DISPERSION MAP 30 1000 300 Ta=25 C I =0.5A Ifsm F Ifsm 1cyc 25 250 I =1A R 8.3ms 8.3ms Irr=0.25*I R 8.3ms 20 n=10pcs 100 1cyc 200 15 150 AVE:187.0A 100 10 10 50 5 AVE:9.30ns 0 0 1 110 100 NUMBER OF CYCLES trr DISPERSION MAP I DISPERSION MAP FSM I -CYCLE CHARACTERISTICS FSM Mounted on epoxy board 1000 100 I =5A F 15 IM=100mA Ifsm time t DC 300us D=1/2 Rth(j-a) Sin( =180) 10 10 1ms 100 Rth(j-c) 1 5 0.1 10 0 0.001 0.01 0.1 1 10 100 1000 110 100 0 5 10 15 20 AVERAGE RECTIFIED TIME:t(ms) TIME:t(s) Rth-t CHARACTERISTICS FORWARD CURRENT : Io(A) I -t CHARACTERISTICS FSM Io-Pf CHARACTERISTICS www.rohm.com 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.04 - Rev.D Not Recommended for New Designs PEAK SURGE PEAK SURGE FORWARD CURRENT:I (A) FORWARD VOLTAGE:V (mV) FORWARD CURRENT:I (A) FSM F F FORWARD CURRENT:I (A) FSM REVERSE CURRENT:I (uA) TRANSIENT R REVERSE RECOVERY TIME:trr(ns) REVERSE CURRENT:I (uA) R THAERMAL IMPEDANCE:Rth (/W) PEAK SURGE CAPACITANCE BETWEEN CAPACITANCE BETWEEN FORWARD POWER FORWARD CURRENT:I (A) TERMINALS:Ct(pF) TERMINALS:Ct(pF) DISSIPATION:Pf(W) FSM