Schottky Barrier Diode RB088T100HZ Datasheet AEC-Q101 Qualified Application Dimensions (Unit : mm) Structure Switching power supply Features 1) Cathode common type (1) (2) (3) 2) High reliability Anode Cathode Anode 3) Super low I R Construction Silicon epitaxial planar type ROHM : TO220FN 1 : Manufacture Date Package Dimensions (Unit : mm) 7 540 Absolute Maximum Ratings (T = 25C) c Parameter Symbol Conditions Limits Unit V Duty0.5 110 Repetitive peak reverse voltage V RM Reverse voltage V Direct reverse voltage 100 V R Glass epoxy board mounted, 60Hz half sin wave, I Average forward rectified current 10 A o resistive load, I /2 per diode, T =137C Max. O c 60Hz half sin wave, Non-repetitive at I Non-repetitive forward current surge peak 100 A FSM T =25C, 1cycle, per diode a Operating junction temperature T - 150 C j T - Storage temperature 55 to 150 C stg Electrical and Thermal Characteristics (T = 25C) j Parameter Symbol Conditions Min. Typ. Max. Unit V I =5A Forward voltage - - 0.87 V F F V =100V Reverse current I -- 5 A R R Thermal resistance R Junction to case -- 2 C / W th(j-c) www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2017.07 - Rev.B 1/5 34.5Datasheet RB088T100HZ Electrical Characteristic Curves 100 1000 T = 150 C j T = 150 C j 100 T = 125 C j 10 10 T = 125 C j 1 T = 75 C j 1 T = 75 C T = 25 C j 0.1 j 0.1 T = 25 C j 0.01 T = 25 C 0.01 j T = 25 C j 0.001 0.001 020 40 60 80 100 0 200 400 600 800 1000 1200 1400 FORWARD VOLTAGE : V (mV) REVERSE VOLTAGE : V (V) F R V -I CHARACTERISTICS V -I CHARACTERISTICS F F R R 1000 760 T = 25 C T=25 C j j 755 I =5A f = 1MHz F n=30pcs 750 745 100 740 Ave. : 731.5mV 735 730 725 10 720 0 102030 REVERSE VOLTAGE : V (V) R V DISPERSION MAP F V -C CHARACTERISTICS R t www.rohm.com 2016 ROHM Co., Ltd. All rights reserved. 2017.07 - Rev.B 2/5 CAPACITANCE BETWEEN FORWARD CURRENT : I (A) F TERMINALS : C (pF) t REVERSE CURRENT : I ( A) FORWARD VOLTAGE : V (mV) R F