X-On Electronics has gained recognition as a prominent supplier of SST4401HZGT116 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. SST4401HZGT116 Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

SST4401HZGT116 ROHM

SST4401HZGT116 electronic component of ROHM
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Part No.SST4401HZGT116
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT NPN SOT-23 0.6A 40V VCEO
Datasheet: SST4401HZGT116 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.1111 ea
Line Total: USD 0.11 
Availability - 95623
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
95623
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.1111
10 : USD 0.0781
100 : USD 0.033
1000 : USD 0.0286
3000 : USD 0.0209
9000 : USD 0.0198
24000 : USD 0.0187

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Technology
Mounting Style
Package / Case
Transistor Polarity
Configuration
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Qualification
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SST4401HZGT116 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SST4401HZGT116 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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SST4401 HZG NPN Medium Power Transistor Datasheet (Switching) AEC-Q101 Qualified llOutline SOT-23 Parameter Value V 40V CEO I 600mA C SST3 llFeatures llInner circuit 1)BV =40V(Min.) at I =1mA CEO C 2)Complements the SST4403 HZG. llApplication AUDIO FREQUENCY SMALL SIGNAL AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-23 SST4401 HZG 2924 T116 180 8 3000 R2X (SST3) llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit Collector-base voltage V 60 V CBO V Collector-emitter voltage 40 V CEO V Emitter-base voltage 6 V EBO Collector current I 600 mA C *1 P 200 mW D Power dissipation *2 P 350 mW D T Junction temperature 150 j Range of storage temperature T -55 to +150 stg www.rohm.com 1/6 20170224 - Rev.002 2017 ROHM Co., Ltd. All rights reserved. SST4401 HZG Datasheet llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. BV I = 100A Collector-base breakdown voltage 60 - - V CBO C Collector-emitter breakdown BV I = 1mA 40 - - V CEO C voltage BV I = 100A Emitter-base breakdown voltage 6 - - V EBO E I V = 35V Collector cut-off current - - 100 nA CBO CB I V = 5V Emitter cut-off current - - 100 nA EBO EB V 1 I = 150mA, I = 15mA CE(sat) - - 400 mV C B Collector-emitter saturation voltage *3 V 2 I = 500mA, I = 50mA - - 750 mV CE(sat) C B V 1 I = 150mA, I = 15mA BE(sat) - - 950 mV C B Base-emitter saturation voltage *3 V 2 I = 500mA, I = 50mA - - 1.2 V BE(sat) C B h 1 V = 1V, I = 100A 20 - - - FE CE C h 2 V = 1V, I = 1mA 40 - - - FE CE C DC current gain h 3 V = 1V, I = 10mA 80 - - - FE CE C h 4 V = 1V, I = 150mA 100 - 300 - FE CE C *3 h 5 V = 2V, I = 500mA 40 - - - CE C FE V = 10V, I = 0A CB E C Output capacitance - - 6.5 pF ob f = 100kHz V = 0.5V, I = 0A BE C C Input capacitance - - 30 pF ib f = 100kHz V = 10V, I = -20mA CE E f Transition frequency 250 - - MHz T f = 100MHz V 30V, I = 150mA CC C Delay time t - - 15 ns d I = 15mA, R = 200 B1 L V = -2V BE(off) Rise time t - - 20 ns r See test circuit V 30V CC t Storage time - - 225 ns stg I = 150mA C I = 15mA B1 I = -15mA, R = 200 B2 L t Fall time - - 30 ns f See test circuit *1 Each terminal mounted on a reference land. *2 Mounted on a ceramic board(7.05.00.6mm). *3 Pulsed www.rohm.com 2/6 20170224 - Rev.002 2017 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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