X-On Electronics has gained recognition as a prominent supplier of SSTA06T116 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. SSTA06T116 Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

SSTA06T116 ROHM

SSTA06T116 electronic component of ROHM
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See Product Specifications
Part No.SSTA06T116
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor NPN 80 V 500 mA 100MHz 350 mW Surface Mount SST3
Datasheet: SSTA06T116 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
329: USD 0.1235 ea
Line Total: USD 40.63 
Availability - 121466
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ: 329  Multiples: 1
Pack Size: 1

 SSTA06T116 More Buying Options & Price Grid(s)

Availability Price Quantity
4533
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.3256
10 : USD 0.2255
100 : USD 0.121
1000 : USD 0.0935
3000 : USD 0.0913
9000 : USD 0.0858

1838
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 288
Multiples : 1
288 : USD 0.4841
500 : USD 0.3211

2861
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 288
Multiples : 1
288 : USD 0.3545
500 : USD 0.3418
1000 : USD 0.3306
2500 : USD 0.3209

121466
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 329
Multiples : 1
329 : USD 0.1235
500 : USD 0.0845
1000 : USD 0.0814
2000 : USD 0.0758
6000 : USD 0.0749
12000 : USD 0.0719
24000 : USD 0.0701

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Category
Brand Category
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SSTA06T116 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SSTA06T116 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

SSTA06 Datasheet NPN General Purpose Transistor llOutline SOT-23 Parameter Value V 80V CEO I 500mA C SST3 llFeatures llInner circuit 1)BV >80V(I =1mA) CEO C 2)Complements the SSTA56 llApplication AUDIO FREQUENCY SIGNAL AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-23 SSTA06 2924 T116 180 8 3000 R1G (SST3) www.rohm.com 1/6 20170224 - Rev.003 2017 ROHM Co., Ltd. All rights reserved. SSTA06 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 80 V CBO V Collector-emitter voltage 80 V CEO V Emitter-base voltage 4 V EBO I Collector current 500 mA C *1 P 200 mW D Power dissipation *2 P 350 mW D Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-emitter breakdown BV I = 1mA 80 - - V CEO C voltage Emitter-base breakdown voltage BV I = 100A 4 - - V EBO E I V = 80V - - 100 nA CBO CB Collector cut-off current I V = 60V - - 1.0 A CEO CE Collector-emitter saturation voltage V I = 100mA, I = 10mA - - 250 mV CE(sat) C B Base-emitter turn V V = 1V, I = 100mA - - 1.2 V BE(on) CE C on voltage h 1 V = 1V, I = 10mA 100 - - FE CE C DC current gain - h 2 V = 1V, I = 100mA 100 - - FE CE C V = 2V, I = -10mA, CE E f Transition frequency 100 - - MHz T f = 100MHz *1 Each terminal mounted on a reference land. *2 Mounted on a ceramic board(7.05.00.6mm). www.rohm.com 2/6 20170224 - Rev.003 2017 ROHM Co., Ltd. All rights reserved.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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