X-On Electronics has gained recognition as a prominent supplier of SSTA56T116 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. SSTA56T116 Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

SSTA56T116 ROHM

SSTA56T116 electronic component of ROHM
SSTA56T116 ROHM
SSTA56T116 Bipolar Transistors - BJT
SSTA56T116 Semiconductors

Images are for reference only
See Product Specifications
Part No. SSTA56T116
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar (BJT) Transistor PNP 80 V 500 mA 50MHz 350 mW Surface Mount SST3
Datasheet: SSTA56T116 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.57 ea
Line Total: USD 0.57 
Availability - 5427
Ship by Fri. 07 Feb to Tue. 11 Feb
MOQ: 1  Multiples: 1
Pack Size: 1

 SSTA56T116 More Buying Options & Price Grid(s)

Availability Price Quantity
5427
Ship by Fri. 07 Feb to Tue. 11 Feb
MOQ : 1
Multiples : 1
1 : USD 0.57
10 : USD 0.37
100 : USD 0.1776
1000 : USD 0.143
3000 : USD 0.1166
9000 : USD 0.1067
24000 : USD 0.1067
45000 : USD 0.1012

Specifications

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the SSTA56T116 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SSTA56T116 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

SSTA56 Datasheet PNP General Purpose Transistor llOutline SOT-23 Parameter Value V -80V CEO I -500mA C SST3 llFeatures llInner circuit 1)BV > -80V(I =-1mA) CEO C 2)Complements the SSTA06 llApplication AUDIO FREQUENCY SMALL SIGNAL AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-23 SSTA56 2924 T116 180 8 3000 R2G (SST3) www.rohm.com 1/6 20170224 - Rev.003 2017 ROHM Co., Ltd. All rights reserved. SSTA56 Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -80 V CBO V Collector-emitter voltage -80 V CEO V Emitter-base voltage -4 V EBO I Collector current -500 mA C *1 P 200 mW D Power dissipation *2 P 350 mW D Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-emitter breakdown BV I = -1mA -80 - - V CEO C voltage Emitter-base breakdown voltage BV I = -100A -4 - - V EBO E I V = -80V - - -100 nA CBO CB Collector cut-off current I V = -60V - - -1.0 A CEO CE Collector-emitter saturation voltage V I = -100mA, I = -10mA - - -250 mV CE(sat) C B Base-emitter turn V V = -1V, I = -100mA - - -1.2 V BE(on) CE C on voltage h 1 V = -1V, I = -10mA 100 - - FE CE C DC current gain - h 2 V = -1V, I = -100mA 100 - - FE CE C V = -1V, I = 100mA, CE E f Transition frequency 50 - - MHz T f = 50MHz *1 Each terminal mounted on a reference land. *2 Mounted on a ceramic board(7.05.00.6mm). www.rohm.com 2/6 20170224 - Rev.003 2017 ROHM Co., Ltd. All rights reserved.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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