X-On Electronics has gained recognition as a prominent supplier of UM6K33NTN MOSFETs across the USA, India, Europe, Australia, and various other global locations. UM6K33NTN MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

UM6K33NTN ROHM

UM6K33NTN electronic component of ROHM
UM6K33NTN ROHM
UM6K33NTN MOSFETs
UM6K33NTN  Semiconductors

Images are for reference only
See Product Specifications
Part No. UM6K33NTN
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET
Datasheet: UM6K33NTN Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3718 ea
Line Total: USD 0.37 
Availability - 117678
Ship by Mon. 27 Jan to Wed. 29 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2803
Ship by Wed. 05 Feb to Mon. 10 Feb
MOQ : 5
Multiples : 5
5 : USD 0.2048
50 : USD 0.1631
150 : USD 0.1219
500 : USD 0.0977
3000 : USD 0.0841
6000 : USD 0.0792

117678
Ship by Mon. 27 Jan to Wed. 29 Jan
MOQ : 1
Multiples : 1
1 : USD 0.3718
10 : USD 0.2255
100 : USD 0.11
1000 : USD 0.0968
3000 : USD 0.0649
9000 : USD 0.0627

39446
Ship by Wed. 29 Jan to Tue. 04 Feb
MOQ : 453
Multiples : 1
453 : USD 0.1435
503 : USD 0.1292
1000 : USD 0.1246
2000 : USD 0.1188
3000 : USD 0.083

2910
Ship by Wed. 29 Jan to Tue. 04 Feb
MOQ : 400
Multiples : 1
400 : USD 0.2547
500 : USD 0.2456
1000 : USD 0.2375
2500 : USD 0.2305

2456
Ship by Wed. 29 Jan to Tue. 04 Feb
MOQ : 400
Multiples : 1
400 : USD 0.2547
500 : USD 0.2456
1000 : USD 0.2375
2500 : USD 0.2305

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Operating Temp Range
Mounting
Package Type
Continuous Drain Current
Drain-Source On-Volt
Operating Temperature Classification
Gate-Source Voltage Max
Type
Number Of Elements
Pin Count
Rad Hardened
Polarity
Power Dissipation
Configuration
Series
Transistor Type
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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We are delighted to provide the UM6K33NTN from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the UM6K33NTN and other electronic components in the MOSFETs category and beyond.

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SemiconductorThe Electronic part UM6K33NTN is a MOSFET manufactured by ROHM Semiconductor. It is an N-Channel, Enhancement Mode Power Field Effect Transistor which supports a drain-source voltage ranging from 30V to 100V. The part has an on-resistance of 6.3 m? max and a VGS(th) of 3.5V~5V, making it suitable for switching applications in a variety of voltages. The product features ROHM's unique Gate Charge Control Gate Structure, which provides low gate noise, low on-resistance and excellent switching characteristics.The part also features a high-speed switching for high frequency applications. Its high withstand voltage rating ensures better device reliability and longer life. It also has a low internal gate resistance providing improvement in response time. In addition, the package has good thermal characteristics enabling high-density mounting.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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