X-On Electronics has gained recognition as a prominent supplier of UM6K33NTN MOSFETs across the USA, India, Europe, Australia, and various other global locations. UM6K33NTN MOSFETs are a product manufactured by ROHM. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

UM6K33NTN ROHM

UM6K33NTN electronic component of ROHM
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Part No.UM6K33NTN
Manufacturer: ROHM
Category: MOSFETs
Description: ROHM Semiconductor MOSFET
Datasheet: UM6K33NTN Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3718 ea
Line Total: USD 0.37 
Availability - 117891
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ: 1  Multiples: 1
Pack Size: 1

 UM6K33NTN More Buying Options & Price Grid(s)

Availability Price Quantity
2910
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 5
Multiples : 5
5 : USD 0.1427
50 : USD 0.1152
150 : USD 0.1014
500 : USD 0.0911
3000 : USD 0.0787
6000 : USD 0.0745

117891
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 0.3718
10 : USD 0.2255
100 : USD 0.11
1000 : USD 0.0968
3000 : USD 0.0649
9000 : USD 0.0627
45000 : USD 0.0616

39835
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 427
Multiples : 1
427 : USD 0.0953
500 : USD 0.0898
1000 : USD 0.0799
2000 : USD 0.0784
24000 : USD 0.078

2910
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 400
Multiples : 1
400 : USD 0.2546
500 : USD 0.2456
1000 : USD 0.2375
2500 : USD 0.2305

2456
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 400
Multiples : 1
400 : USD 0.344

Specifications

   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Operating Temp Range
Mounting
Package Type
Continuous Drain Current
Drain-Source On-Volt
Operating Temperature Classification
Gate-Source Voltage Max
Type
Number Of Elements
Pin Count
Rad Hardened
Polarity
Power Dissipation
Configuration
Series
Transistor Type
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the UM6K33NTN from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the UM6K33NTN and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

SemiconductorThe Electronic part UM6K33NTN is a MOSFET manufactured by ROHM Semiconductor. It is an N-Channel, Enhancement Mode Power Field Effect Transistor which supports a drain-source voltage ranging from 30V to 100V. The part has an on-resistance of 6.3 m? max and a VGS(th) of 3.5V~5V, making it suitable for switching applications in a variety of voltages. The product features ROHM's unique Gate Charge Control Gate Structure, which provides low gate noise, low on-resistance and excellent switching characteristics.The part also features a high-speed switching for high frequency applications. Its high withstand voltage rating ensures better device reliability and longer life. It also has a low internal gate resistance providing improvement in response time. In addition, the package has good thermal characteristics enabling high-density mounting.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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