X-On Electronics has gained recognition as a prominent supplier of UMD6NFHATR Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. UMD6NFHATR Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

UMD6NFHATR ROHM

UMD6NFHATR electronic component of ROHM
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See Product Specifications
Part No.UMD6NFHATR
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT PNP+NPN DIGITAL TRANS
Datasheet: UMD6NFHATR Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3806 ea
Line Total: USD 0.38 
Availability - 4829
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ: 1  Multiples: 1
Pack Size: 1

 UMD6NFHATR More Buying Options & Price Grid(s)

Availability Price Quantity
4829
Ship by Wed. 04 Dec to Fri. 06 Dec
MOQ : 1
Multiples : 1
1 : USD 0.3806
10 : USD 0.2431
100 : USD 0.1232
1000 : USD 0.1133
3000 : USD 0.0781

Specifications

   
Manufacturer
Product Category
Mounting Style
Package / Case
Transistor Polarity
Configuration
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Qualification
Packaging
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the UMD6NFHATR from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the UMD6NFHATR and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

UMD6N FHA General purpose (Dual digital transistor) Datasheet AEC-Q101 Qualified <For DTr1(NPN)> llOutline Parameter Value SOT-363 V 50V CEO SC-88 I 100mA C R 4.7k 1 UMT6 <For DTr2(PNP)> Parameter Value V -50V CEO I -100mA C R 4.7k 1 llFeatures llInner circuit 1)Both the DTA143T chip and DTC143T chip in an UMT6 package. 2)Mounting possible with UMT3 automatic mounting machines. 3)Transistor elements are independent, eliminating interference. 4)Mounting cost and area can be cut in half. llApplication INVERTER, INTERFACE, DRIVER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-363 UMD6N FHA 2021 TR 180 8 3000 D6 (UMT6) www.rohm.com 1/5 20161012 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.UMD6N FHA Datasheet llAbsolute maximum ratings (T = 25C) a Parameter Symbol DTr1(NPN) DTr2(PNP) Unit V Collector-base voltage 50 -50 V CBO V Collector-emitter voltage 50 -50 V CEO V Emitter-base voltage 5 -5 V EBO Collector current I 100 -100 mA C *1*2 P Power dissipation 150 mW/Total D Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) <For DTr1(NPN)> a Values Parameter Symbol Conditions Unit Min. Typ. Max. BV Collector-base breakdown voltage I = 50A 50 - - V CBO C Collector-emitter breakdown BV I = 1mA 50 - - V CEO C voltage BV Emitter-base breakdown voltage I = 50A 5 - - V EBO E Collector cut-off current I V = 50V - - 500 nA CBO CB I Emitter cut-off current V = 4V - - 500 nA EBO EB I = 5mA, I = 250A Collector-emitter saturation voltage V - - 300 mV C B CE(sat) h DC current gain V = 5V, I = 1mA 100 250 600 - FE CE C R Input resistance - 3.29 4.7 6.11 k 1 V = 10V, I = -5mA, CE E *3 f Transition frequency - 250 - MHz T f = 100MHz llElectrical characteristics (T = 25C) <For DTr2(PNP)> a Values Parameter Symbol Conditions Unit Min. Typ. Max. BV Collector-base breakdown voltage I = -50A -50 - - V CBO C Collector-emitter breakdown BV I = -1mA -50 - - V CEO C voltage BV Emitter-base breakdown voltage I = -50A -5 - - V EBO E Collector cut-off current I V = -50V - - -500 nA CBO CB I Emitter cut-off current V = -4V - - -500 nA EBO EB I = -5mA, I = -0.25mA Collector-emitter saturation voltage V - - -300 mV C B CE(sat) h DC current gain V = -5V, I = -1mA 100 250 600 - FE CE C R Input resistance - 3.29 4.7 6.11 k 1 V = -10V, I = 5mA, CE E *3 f Transition frequency - 250 - MHz T f = 100MHz *1 Each terminal mounted on a reference land. *2 120mW per element must not be exceeded. *3 Characteristics of built-in transistor. www.rohm.com 2/5 20161012 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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