X-On Electronics has gained recognition as a prominent supplier of UMT1NFHATN Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. UMT1NFHATN Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

UMT1NFHATN ROHM

UMT1NFHATN electronic component of ROHM
Images are for reference only
See Product Specifications
Part No.UMT1NFHATN
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT TRANS DIGITAL PNP+PNP
Datasheet: UMT1NFHATN Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3464 ea
Line Total: USD 0.35 
Availability - 10152
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ: 1  Multiples: 1
Pack Size: 1

 UMT1NFHATN More Buying Options & Price Grid(s)

Availability Price Quantity
10152
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 0.3464
10 : USD 0.2072
100 : USD 0.1252
1000 : USD 0.1147
3000 : USD 0.089
9000 : USD 0.0878
24000 : USD 0.0843
45000 : USD 0.0831

Specifications

   
Manufacturer
Product Category
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Maximum Operating Temperature
Qualification
Packaging
Hts Code
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the UMT1NFHATN from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the UMT1NFHATN and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

UMT1N FHA Datasheet General Purpose Transistor (Isolated Dual Transistors) AEC-Q101 Qualified llOutline Parameter Tr1 and Tr2 SOT-363 V -50V CEO SC-88 I -150mA C UMT6 llFeatures llInner circuit 1)Two 2SA1037AK chips in a UMT package. 2)Mounting possible with UMT3 automatic mounting machines. 3)Transistor elements are independent, eliminating interference. 4)Mounting cost and area can be cut in half llApplication GENERAL PURPOSE SMALL SIGNAL AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-363 UMT1N FHA 2021 TN 180 8 3000 T1 (UMT6) www.rohm.com 1/6 20160909 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. UMT1N FHA Datasheet llAbsolute maximum ratings (T = 25C) <It is the same ratings for the Tr1 and Tr2> a Parameter Symbol Values Unit V Collector-base voltage -60 V CBO V Collector-emitter voltage -50 V CEO V Emitter-base voltage -6 V EBO I Collector current -150 mA C total *1 P 150 mW D Power dissipation P element 120 mW D Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) <It is the same characteristics for the Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = -50A -60 - - V CBO C voltage Collector-emitter breakdown BV I = -1mA -50 - - V CEO C voltage BV Emitter-base breakdown voltage I = -50A -6 - - V EBO E I Collector cut-off current V = -60V - - -100 nA CBO CB Emitter cut-off current I V = -6V - - -100 nA EBO EB Collector-emitter saturation voltage V I = -50mA, I = -5mA - - -500 mV CE(sat) C B DC current gain h V = -6V, I = -1mA 120 - 560 - FE CE C V = -12V, I = 2mA, CE E f Transition frequency - 140 - MHz T f = 100MHz V = -12V, I = 0A, CB E C Output capacitance - 4.0 5.0 pF ob f = 1MHz *1 Each terminal mounted on a reference land. *2 120mW per element must not be exceeded. *3 200mW per element must not be exceeded. www.rohm.com 2/6 20160909 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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