X-On Electronics has gained recognition as a prominent supplier of UMT2907AT106 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. UMT2907AT106 Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

UMT2907AT106 ROHM

UMT2907AT106 electronic component of ROHM
Images are for reference only
See Product Specifications
Part No.UMT2907AT106
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Transistors Bipolar - BJT PNP 60V 0.6A
Datasheet: UMT2907AT106 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

10: USD 0.0418 ea
Line Total: USD 0.42

Availability - 1835
Ship by Thu. 15 Aug to Tue. 20 Aug
MOQ: 10  Multiples: 10
Pack Size: 10
Availability Price Quantity
1835
Ship by Thu. 15 Aug to Tue. 20 Aug
MOQ : 10
Multiples : 10
10 : USD 0.0418
100 : USD 0.0336
300 : USD 0.0294
3000 : USD 0.0263
6000 : USD 0.0238
9000 : USD 0.0226

8048
Ship by Wed. 14 Aug to Fri. 16 Aug
MOQ : 1
Multiples : 1
1 : USD 0.3599
10 : USD 0.2507
100 : USD 0.1035
1000 : USD 0.077
3000 : USD 0.069
9000 : USD 0.0563
24000 : USD 0.0541
45000 : USD 0.0506
99000 : USD 0.0483

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Transistor Polarity
Configuration
Maximum DC Collector Current
Collector- Emitter Voltage VCEO Max
Collector- Base Voltage VCBO
Emitter- Base Voltage VEBO
Collector-Emitter Saturation Voltage
Pd - Power Dissipation
Gain Bandwidth Product fT
Minimum Operating Temperature
Maximum Operating Temperature
Series
Packaging
Dc Current Gain Hfe Max
Brand
Continuous Collector Current
Dc Collector/Base Gain Hfe Min
Maximum Power Dissipation
Factory Pack Quantity :
Height
Length
Cnhts
Hts Code
Mxhts
Product Type
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Taric
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We are delighted to provide the UMT2907AT106 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the UMT2907AT106 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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UMT2907A Datasheet PNP Medium Power Transistor (Switching) llOutline SOT-323 Parameter Value SC-70 V -60V CEO I -600mA C UMT3 llFeatures llInner circuit 1)BV -60V (I =-10mA) CEO C llApplication AUDIO FREQUENCY SMALL SIGNAL AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-323 UMT2907A 2021 T106 180 8 3000 R2F (UMT3) llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -60 V CBO V Collector-emitter voltage -60 V CEO V Emitter-base voltage -5 V EBO I Collector current -600 mA C *1 P Power dissipation 200 mW D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg www.rohm.com 1/4 20161025 - Rev.002 2016 ROHM Co., Ltd. All rights reserved. UMT2907A Datasheet llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. BV I = -10A Collector-base breakdown voltage -60 - - V CBO C Collector-emitter breakdown BV I = -10mA -60 - - V CEO C voltage BV I = -10A Emitter-base breakdown voltage -5 - - V EBO E I V = -50V - - -100 nA CBO CB Collector cut-off current I V = -30V - - -100 nA CES CE I V = -3V Emitter cut-off current - - -100 nA EBO EB V 1 I = -150mA, I = -15mA - - -400 mV CE(sat) C B Collector-emitter saturation voltage *2 V 2 I = -500mA, I = -50mA - - -1.6 V CE(sat) C B V 1 I = -150mA, I = -15mA - - -1.3 V BE(sat) C B Base-emitter saturation voltage *2 V 2 I = -500mA, I = -50mA - - -2.6 V BE(sat) C B h 1 V = -10V, I = -100A 75 - - - FE CE C h 2 V = -10V, I = -1mA 100 - - - FE CE C h 3 DC current gain V = -10V, I = -10mA 100 - - - FE CE C *2 V = -10V, I = -150mA 100 - 300 - h 4 CE C FE *2 V = -10V, I = -500mA 50 - - - h 5 FE CE C V = -10V, I = 0A CB E C Output capacitance - - 8 pF ob f = 100kHz V = -2V, I = 0A BE C C Input capacitance - - 30 pF ib f = 100kHz V = -20V, I = 50mA CE E f Transition frequency 200 - - MHz T f = 100MHz *2 Turn-On Delay time - - 50 ns t on V -30V, I = -150mA CC C I = -15mA, R = 200 B1 L *2 Delay time t - - 10 ns d V = 500mV BE(off) *2 See test circuit Rise time - - 40 ns t r *2 V -30V Turn-Off Delay time t - - 100 ns CC off I = -150mA C *2 Storage time t - - 80 ns I = -15mA stg B1 I = 15mA, R = 200 B2 L *2 Fall time t - - 30 ns See test circuit f *1 Each terminal mounted on a reference land. *2 Pulsed www.rohm.com 2/4 20161025 - Rev.002 2016 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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