UMT3906 Datasheet PNP General Purpose Transistor llOutline SOT-323 Parameter Value SC-70 V -40V CEO I -200mA C UMT3 llFeatures llInner circuit 1)BV -40V (I =-1mA) CEO C 2)Complements the UMT3904 3)Low capacitance llApplication AUDIO FREQUENCY SMALL SIGNAL AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-323 UMT3906 2021 T106 180 8 3000 R2A (UMT3) llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage -40 V CBO V Collector-emitter voltage -40 V CEO V Emitter-base voltage -5 V EBO I Collector current -200 mA C *1 P Power dissipation 200 mW D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg www.rohm.com 1/4 20161025 - Rev.002 2016 ROHM Co., Ltd. All rights reserved. UMT3906 Datasheet llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. BV Collector-base breakdown voltage I = -10A -40 - - V CBO C Collector-emitter breakdown BV I = -1mA -40 - - V CEO C voltage Emitter-base breakdown voltage BV I = -10A -5 - - V EBO E I Collector cut-off current V = -30V - - -50 nA CES CE Emitter cut-off current I V = -3V - - -50 nA EBO EB V 1 CE(sat) I = -10mA, I = -1mA - - -250 mV C B Collector-emitter saturation voltage V 2 I = -50mA, I = -5mA - - -400 mV CE(sat) C B V 1 I = -10mA, I = -1mA -650 - -850 mV BE(sat) C B Base-emitter saturation voltage V 2 BE(sat) I = -50mA, I = -5mA - - -950 mV C B h 1 V = -1V, I = -100A 60 - - - FE CE C h 2 V = -1V, I = -1mA 80 - - - FE CE C h 3 DC current gain V = -1V, I = -10mA 100 - 300 - FE CE C h 4 V = -1V, I = -50mA 60 - - - FE CE C h 5 V = -1V, I = -100mA 30 - - - FE CE C V = -10V, I = 0A CB E C Output capacitance - - 4.5 pF ob f = 100kHz V = -0.5V, I = 0A BE C C Input capacitance - - 10 pF ib f = 100kHz V = -20V, I = 10mA CE E *2 Transition frequency 250 - - MHz f T f = 100MHz V -3V, I = -10mA *2 CC C Delay time - - 35 ns t d I = -1mA, R = 300 B1 L V = 500mV BE(off) *2 Rise time - - 35 ns t r See test circuit V -3V *2 CC Storage time - - 225 ns t stg I = -10mA C I = -1mA B1 I = 1mA, R = 300 B2 L *2 Fall time - - 75 ns t f See test circuit *1 Each terminal mounted on a reference land. *2 Pulsed www.rohm.com 2/4 20161025 - Rev.002 2016 ROHM Co., Ltd. All rights reserved.