UMT4401U3HZG Datasheet NPN Medium Power Transistor (Switching) AEC-Q101 Qualified llOutline SOT-323 Parameter Value SC-70 V 40V CEO I 600mA C UMT3 llFeatures llInner circuit 1)BV =40V(Min.) at I =1mA CEO C 2)Complements the UMT4403U3 HZG. llApplication AUDIO FREQUENCY SMALL SIGNAL AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-323 UMT4401U3HZG 2021 T106 180 8 3000 R2X (UMT3) llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 60 V CBO V Collector-emitter voltage 40 V CEO V Emitter-base voltage 6 V EBO I Collector current 600 mA C *1 P Power dissipation 200 mW D T Junction temperature 150 j T Range of storage temperature -55 to +150 stg www.rohm.com 1/6 20181228 - Rev.001 2018 ROHM Co., Ltd. All rights reserved. UMT4401U3HZG Datasheet llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. BV Collector-base breakdown voltage I = 100A 60 - - V CBO C Collector-emitter breakdown BV I = 1mA 40 - - V CEO C voltage Emitter-base breakdown voltage BV I = 100A 6 - - V EBO E I Collector cut-off current V = 35V - - 100 nA CBO CB Emitter cut-off current I V = 5V - - 100 nA EBO EB V 1 CE(sat) I = 150mA, I = 15mA - - 400 mV C B Collector-emitter saturation voltage V 2 I = 500mA, I = 50mA - - 750 mV CE(sat) C B V 1 I = 150mA, I = 15mA - - 950 mV BE(sat) C B Base-emitter saturation voltage V 2 BE(sat) I = 500mA, I = 50mA - - 1.2 V C B h 1 V = 1V, I = 100A 20 - - - FE CE C h 2 V = 1V, I = 1mA 40 - - - FE CE C h 3 DC current gain V = 1V, I = 10mA 80 - - - FE CE C h 4 V = 1V, I = 150mA 100 - 300 - FE CE C *2 V = 2V, I = 500mA 40 - - - h 5 FE CE C V = 10V, I = 0A CB E C Output capacitance - - 6.5 pF ob f = 100kHz V = 0.5V, I = 0A BE C C Input capacitance - - 30 pF ib f = 100kHz V = 10V, I = -20mA CE E f Transition frequency 250 - - MHz T f = 100MHz V 30V, I = 150mA CC C t Delay time - - 15 ns d I = 15mA, R = 200 B1 L V = -2V BE(off) t Rise time - - 20 ns r See test circuit V 30V CC Storage time t - - 225 ns stg I = 150mA C I = 15mA B1 I = -15mA, R = 200 B2 L t Fall time - - 30 ns f See test circuit *1 Each terminal mounted on a reference land. *2 Pulsed www.rohm.com 2/6 20181228 - Rev.001 2018 ROHM Co., Ltd. All rights reserved.