SST4401 / UMT4401U3 Datasheet NPN Medium Power Transistor (Switching) llOutline Parameter Value SOT-23 SOT-323 V 40V CEO I 600mA C SST4401 UMT4401U3 (SST3) (UMT3) llFeatures 1)BV =40V(Min.) at I =1mA CEO C llInner circuit 2)Complements the SST4403/UMT4403U3. llApplication AUDIO FREQUENCY SMALL SIGNAL AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-23 SST4401 2924 T116 180 8 3000 R2X (SST3) SOT-323 UMT4401U3 2021 T106 180 8 3000 R2X (UMT3) llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 60 V CBO Collector-emitter voltage V 40 V CEO V Emitter-base voltage 6 V EBO I Collector current 600 mA C *1 P 200 mW D Power dissipation *2 P 350 mW D Junction temperature T 150 j T Range of storage temperature -55 to +150 stg www.rohm.com 1/8 20181217 - Rev.002 2018 ROHM Co., Ltd. All rights reserved. SST4401 / UMT4401U3 Datasheet llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. BV I = 100A Collector-base breakdown voltage 60 - - V CBO C Collector-emitter breakdown BV I = 1mA 40 - - V CEO C voltage BV I = 100A Emitter-base breakdown voltage 6 - - V EBO E I V = 35V Collector cut-off current - - 100 nA CBO CB I V = 5V Emitter cut-off current - - 100 nA EBO EB V 1 I = 150mA, I = 15mA CE(sat) - - 400 mV C B Collector-emitter saturation voltage *2 V 2 I = 500mA, I = 50mA - - 750 mV CE(sat) C B V 1 I = 150mA, I = 15mA BE(sat) - - 0.95 V C B Base-emitter saturation voltage *2 V 2 I = 500mA, I = 50mA - - 1.2 V BE(sat) C B h 1 V = 1V, I = 100A 20 - - - FE CE C h 2 V = 1V, I = 1mA 40 - - - FE CE C DC current gain h 3 V = 1V, I = 10mA 80 - - - FE CE C h 4 V = 1V, I = 150mA 100 - 300 - FE CE C *3 h 5 V = 2V, I = 500mA 40 - - - CE C FE V = 10V, I = 0A CB E C Output capacitance - - 6.5 pF ob f = 100kHz V = 0.5V, I = 0A BE C C Input capacitance - - 30 pF ib f = 100kHz V = 10V, I = -20mA CE E f Transition frequency 250 - - MHz T f = 100MHz V 30V CC Delay time t - - 15 ns d I = 150mA C I = 15mA, R = 200 B1 L Rise time t - - 20 ns r See test circuit V 30V CC t Storage time - - 225 ns stg I = 150mA C I = 15mA B1 I = -15mA, R = 200 B2 L t Fall time - - 30 ns f See test circuit *1 Each terminal mounted on a reference land. *2 Mounted on a ceramic board(7.05.00.6mm). *3 Pulsed www.rohm.com 2/8 20181217 - Rev.002 2018 ROHM Co., Ltd. All rights reserved.