X-On Electronics has gained recognition as a prominent supplier of UMT4401U3T106 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. UMT4401U3T106 Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

UMT4401U3T106 ROHM

UMT4401U3T106 electronic component of ROHM
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See Product Specifications
Part No.UMT4401U3T106
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT TRANS DIGITAL NPN
Datasheet: UMT4401U3T106 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.5892 ea
Line Total: USD 0.59

Availability - 1452
Ship by Mon. 29 Jul to Wed. 31 Jul
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1447
Ship by Mon. 29 Jul to Wed. 31 Jul
MOQ : 1
Multiples : 1
1 : USD 0.4865
10 : USD 0.4152
100 : USD 0.2921
500 : USD 0.2507
1000 : USD 0.2024
3000 : USD 0.1702
9000 : USD 0.1691
24000 : USD 0.1667
45000 : USD 0.1633

   
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We are delighted to provide the UMT4401U3T106 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the UMT4401U3T106 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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SST4401 / UMT4401U3 Datasheet NPN Medium Power Transistor (Switching) llOutline Parameter Value SOT-23 SOT-323 V 40V CEO I 600mA C SST4401 UMT4401U3 (SST3) (UMT3) llFeatures 1)BV =40V(Min.) at I =1mA CEO C llInner circuit 2)Complements the SST4403/UMT4403U3. llApplication AUDIO FREQUENCY SMALL SIGNAL AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-23 SST4401 2924 T116 180 8 3000 R2X (SST3) SOT-323 UMT4401U3 2021 T106 180 8 3000 R2X (UMT3) llAbsolute maximum ratings (T = 25C) a Parameter Symbol Values Unit V Collector-base voltage 60 V CBO Collector-emitter voltage V 40 V CEO V Emitter-base voltage 6 V EBO I Collector current 600 mA C *1 P 200 mW D Power dissipation *2 P 350 mW D Junction temperature T 150 j T Range of storage temperature -55 to +150 stg www.rohm.com 1/8 20181217 - Rev.002 2018 ROHM Co., Ltd. All rights reserved. SST4401 / UMT4401U3 Datasheet llElectrical characteristics (T = 25C) a Values Parameter Symbol Conditions Unit Min. Typ. Max. BV I = 100A Collector-base breakdown voltage 60 - - V CBO C Collector-emitter breakdown BV I = 1mA 40 - - V CEO C voltage BV I = 100A Emitter-base breakdown voltage 6 - - V EBO E I V = 35V Collector cut-off current - - 100 nA CBO CB I V = 5V Emitter cut-off current - - 100 nA EBO EB V 1 I = 150mA, I = 15mA CE(sat) - - 400 mV C B Collector-emitter saturation voltage *2 V 2 I = 500mA, I = 50mA - - 750 mV CE(sat) C B V 1 I = 150mA, I = 15mA BE(sat) - - 0.95 V C B Base-emitter saturation voltage *2 V 2 I = 500mA, I = 50mA - - 1.2 V BE(sat) C B h 1 V = 1V, I = 100A 20 - - - FE CE C h 2 V = 1V, I = 1mA 40 - - - FE CE C DC current gain h 3 V = 1V, I = 10mA 80 - - - FE CE C h 4 V = 1V, I = 150mA 100 - 300 - FE CE C *3 h 5 V = 2V, I = 500mA 40 - - - CE C FE V = 10V, I = 0A CB E C Output capacitance - - 6.5 pF ob f = 100kHz V = 0.5V, I = 0A BE C C Input capacitance - - 30 pF ib f = 100kHz V = 10V, I = -20mA CE E f Transition frequency 250 - - MHz T f = 100MHz V 30V CC Delay time t - - 15 ns d I = 150mA C I = 15mA, R = 200 B1 L Rise time t - - 20 ns r See test circuit V 30V CC t Storage time - - 225 ns stg I = 150mA C I = 15mA B1 I = -15mA, R = 200 B2 L t Fall time - - 30 ns f See test circuit *1 Each terminal mounted on a reference land. *2 Mounted on a ceramic board(7.05.00.6mm). *3 Pulsed www.rohm.com 2/8 20181217 - Rev.002 2018 ROHM Co., Ltd. All rights reserved.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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