X-On Electronics has gained recognition as a prominent supplier of UMX1NFHATN Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. UMX1NFHATN Bipolar Transistors - BJT are a product manufactured by ROHM. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

UMX1NFHATN ROHM

UMX1NFHATN electronic component of ROHM
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See Product Specifications
Part No.UMX1NFHATN
Manufacturer: ROHM
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT TRANS DIGITAL NPN+NPN
Datasheet: UMX1NFHATN Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.4585 ea
Line Total: USD 0.46 
Availability - 5683
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ: 1  Multiples: 1
Pack Size: 1

 UMX1NFHATN More Buying Options & Price Grid(s)

Availability Price Quantity
5683
Ship by Thu. 26 Dec to Mon. 30 Dec
MOQ : 1
Multiples : 1
1 : USD 0.4585
10 : USD 0.2865
100 : USD 0.1398
1000 : USD 0.1236
3000 : USD 0.1039
9000 : USD 0.0866
24000 : USD 0.0866
45000 : USD 0.082

Specifications

   
Manufacturer
Product Category
Transistor Polarity
Brand
Collector Emitter Voltage Vbrceo
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Transistor Case Style
No. Of Pins
Operating Temperature Max
Automotive Qualification Standard
Msl
Svhc
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the UMX1NFHATN from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the UMX1NFHATN and other electronic components in the Bipolar Transistors - BJT category and beyond.

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Additional Infomation About Product

UMX1N FHA Datasheet General purpose transistor (dual transistors) AEC-Q101 Qualified llOutline Parameter Tr1 and Tr2 SOT-363 V 50V CEO SC-88 I 150mA C UMT6 llFeatures llInner circuit 1) Two 2SC2412K chips in a UMT package. 2) Mounting possible with UMT3 automatic mounting machines. 3)Transistor elements are independent, eliminating interference. 4)Mounting cost and area can be cut in half. llApplication GENERAL PURPOSE SMALL SIGNAL AMPLIFIER llPackaging specifications Basic Package Taping Reel size Tape width Part No. Package ordering Marking size code (mm) (mm) unit.(pcs) SOT-363 UMX1N FHA 2021 TN 180 8 3000 X1 (UMT6) www.rohm.com 1/6 20160909 - Rev.001 2016 ROHM Co., Ltd. All rights reserved. UMX1N FHA Datasheet llAbsolute maximum ratings (T = 25C) <It is the same ratings for the Tr1 and Tr2> a Parameter Symbol Values Unit V Collector-base voltage 60 V CBO V Collector-emitter voltage 50 V CEO V Emitter-base voltage 7 V EBO I Collector current 150 mA C *1 total P 150 mW D Power dissipation element P 120 mW D Junction temperature T 150 j T Range of storage temperature -55 to +150 stg llElectrical characteristics (T = 25C) <It is the same characteristics for the Tr1 and Tr2> a Values Parameter Symbol Conditions Unit Min. Typ. Max. Collector-base breakdown BV I = 50A 60 - - V CBO C voltage Collector-emitter breakdown BV I = 1mA 50 - - V CEO C voltage Emitter-base breakdown voltage BV I = 50A 7 - - V EBO E I Collector cut-off current V = 60V - - 100 nA CBO CB I Emitter cut-off current V = 7V - - 100 nA EBO EB Collector-emitter saturation voltage V I = 50mA, I = 5mA - - 400 mV CE(sat) C B h DC current gain V = 6V, I = 1mA 120 - 560 - FE CE C V = 12V, I = -2mA, CE E Transition frequency f - 180 - MHz T f = 100MHz V = 12V, I = 0A, CB E C Output capacitance - 2.0 3.5 pF ob f = 1MHz *1 Each terminal mounted on a reference land. www.rohm.com 2/6 20160909 - Rev.001 2016 ROHM Co., Ltd. All rights reserved.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

LAPIS Semiconductor may also be referenced as

RHE
RHM
ROHM Semicon
ROHM Semiconductor

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