UMX21N Transistors High transition frequency (dual transistors) UMX21N z Dimensions (Unit : mm) z Features 1) Two 2SC4713K chips in a UMT package. UMX21N 2) Very low output-on resistance. (Ron) 3) Low capacitance. z Equivalent circuits UMX21N (3) (2) (1) Tr2 ROHM : UMT6 Each lead has same dimensions Tr1 EIAJ : SC-88 (4) (5) (6) z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 12 V Collector-emitter voltage VCEO 6 V Emitter-base voltage VEBO 3 V Collector current IC 50 mA Collector power dissipation PC 150 mW Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C 120mW per element must not be exceeded. z Package, marking, and packaging specifications Type UMX21N Package UMT6 Marking X21 Code TR Basic ordering unit (pieces) 3000 z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 12 V IC=10A Collector-emitter breakdown voltage BVCEO 6 V IC=1mA Emitter-base breakdown voltage BVEBO 3 V IE=10A A Collector cutoff current ICBO 0.5 VCB=10V Emitter cutoff current IEBO 0.5 A VEB=2V Collector-emitter saturation voltage VCE(sat) 0.3 V IC/IB=10mA/1mA DC current transfer ratio hFE 270 560 VCE/IC=5V/10mA Transition frequency fT 300 800 MHz VCE=5V, IE= 10mA, f=200MHz Output capacitance Cob 1 1.7 pF VCB=10V, IE=0A, f=1MHz Output-on resistance Ron 2 IB=3mA, VI=100mVrms, f=500kHz This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. Rev.A 1/2 Not Recommended for New DesignsUMX21N Transistors z Electrical characteristics curves 10 50 50 Ta=25C Ta=25C VCE=5V 8 40 40 6 30 30 4 20 20 2 10 10 IB=0A IB=0mA 0 0 0 0 1 2345 0 0.1 0.2 0.3 0.4 0.5 0 0.4 0.8 1.2 1.6 2.0 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Grounded emitter output Fig.2 Grounded emitter output Fig.3 Grounded emitter propagation characteristics ( ) characteristics ( ) characteristics 2000 1000 1000 Ta=25C Ta=25C Ta=25C VCE=5V IC/IB=10 VCE=5V 1000 500 500 500 200 200 100 200 100 100 50 50 20 50 10 20 5 20 10 0.1 0.2 0.5 12 5 10 20 50 0.1 0.2 0.5 12 5 10 20 50 0.1 0.2 0.5 12 5 10 20 50 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.6 Gain bandwidth product vs. Fig.5 Collector-emitter saturation Fig.4 DC current gain vs. collector current collector current voltage vs. collector current 20 20 50 Ta=25C Ta=25C Ta=25C f=1MHz f=1MHz f=500kHz 10 10 i=100mVrms 5 5 RL=1k 20 2 2 10 5 1 1 0.5 0.5 2 0.2 0.2 1 0.1 0.2 0.5 12 5 10 20 50 0.1 0.2 0.5 12 5 10 20 50 0.1 0.2 0.5 12 5 10 20 50 COLLECTOR TO BASE VOLTAGE : VCB (V) COLLECTOR TO BASE VOLTAGE : VCB (V) BASS CURRENT : IB (mA) Fig.8 Back capacitance voltage Fig.7 Collector output capacitance Fig.9 Output-on resistance vs. vs. voltage base current Rev.A 2/2 35mA 0.3mA 30mA 25mA 0.2mA 20mA 15mA 0.1mA 10mA 5mA 0.5mA 0.4mA Not Recommended for New Designs 1.0mA 125C 25C 25C DC CURRENT TRANSFER RATIO : hFE COLLECTOR CURRENT : IC (mA) FEEDBACK CAPACITIANCE : Cre (pF) OUTPUT CAPACITANCE : Cob (pF) COLLECTOR CURRENT : IC (mA) COLLECTER SATURATION VOLTAGE : VCE(sat) (mA) ON RESISTANE : Ron ( ) COLLECTOR CURRENT : IC (mA) GAIN BANDWIDTH PRODUCT : fT (MHz)