EMX4 / UMX4N / IMX4 Transistors High transition frequency (dual transistors) EMX4 / UMX4N / IMX4 z Dimensions (Unit : mm) z Features 1) Two 2SC3837K chips in a EMT or UMT or SMT package. EMX4 2) High transition frequency. (fT=1.5GHz) 3) Low output capacitance. (Cob=0.9pF) z Equivalent circuits EMX4 / UMX4N IMX4 (3) (2) (1) (4) (5) (6) ROHM : EMT6 Each lead has same dimensions UMX4N (4) (5) (6) (3) (2) (1) z Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit ROHM : UMT6 Each lead has same dimensions EIAJ : SC-88 Collector-base voltage VCBO 30 V Collector-emitter voltage VCEO 20 V IMX4 Emitter-base voltage VEBO 3 V Collector current IC 50 mA EMX4 / UMX4N 150(TOTAL) 1 Collector power Pc mW dissipation IMX4 300(TOTAL) 2 Junction temperature Tj 150 C Storage temperature Tstg 55 to +150 C 1 120mW per element must not be exceeded. 2 200mW per element must not be exceeded. ROHM : SMT6 Each lead has same dimensions EIAJ : SC-74 z Package, marking, and packaging specifications Type UMX4N IMX4 EMX4 SMT6 Package EMT6 UMT6 Marking X4 X4 X4 Code T2R TR T108 Basic ordering unit (pieces) 8000 3000 3000 z Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 30 V IC=10A Collector-emitter breakdown voltage BVCEO 20 V IC=1mA Emitter-base breakdown voltage BVEBO 3 V IE=10A Collector cutoff current ICBO 0.5 A VCB=15V Emitter cutoff current IEBO 0.5 A VEB=2V DC current transfer ratio hFE 56 180 VCE/IC=10V/10mA Collector-emitter saturation voltage VCE(sat) 0.5 V IC/IB=20mA/4mA Transition frequency fT 600 1500 MHz VCE/IE=10V/ 10mA, f=200MHz Output capacitance Cob 0.95 1.6 pF VCB/f=10V/1MHz, IE=0A Collector-base time constant rbb Cc 6 13 ps VCB=10V, IC=10mA , f=31.8MHz Noise factor NF 4.5 dB VCE=12V, IC=2mA , f=200MHz , Rg=50 Transition frequency of the device. This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. Rev.C 1/3 EMX4 / UMX4N / IMX4 Transistors z Electrical characteristic curves 500 5.0 500 Ta=25C Ta=25C Ta=25C VCE=10V f=1MHz IC/IB=5 IE=0A 200 2.0 200 Cob 100 1.0 100 50 0.5 50 Cre 20 0.2 20 10 0.1 10 0.1 0.2 0.5 1 2 5 10 20 50 0.1 0.2 0.5 1 2 5 10 20 50 0.1 0.2 0.5 1 2 5 10 20 50 COLLECTOR CURRENT : IC (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) COLLECTOR CURRENT : IC (mA) Fig.1 DC current gain vs. collector current Fig.3 Capacitance vs. reverse bias voltage Fig.2 Collector-emitter saturation voltage vs. collector current 50 5000 Ta=25C Ta=25C VCE=10V 25 VCE=10V IC=10mA 2000 20 20 10 1000 15 500 5 10 5 200 2 Ta=25C VCE=10V f=31.8MHz 100 1 0 0.1 0.2 0.5 1 2 5 10 20 50 0.1 0.2 0.5 1 2 5 10 20 50 0.1 0.2 0.5 1 2 5 10 EMITTER CURRENT : IE (mA) COLLECTOR CURRENT : IC (mA) FREQUENCY : f (GHz) Fig.4 Gain bandwidth product vs. emitter current Fig.5 Collector to base time constance Fig.6 Insertion gain vs. frequency vs. collector current 30 25 Ta=25C Ta=25C Ta=25C IC=2mA VCE=12V VCE=12V f=200MHz f=200MHz f=200MHz 25 20 20 20 15 15 10 10 10 5 5 0 0 0 0.5 1 2 5 10 20 50 02 4 6 8 10 12 0.1 0.2 0.5 1 2 5 10 20 50 COLLECTOR CURRENT : Ic (mA) COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (mA) Fig.7 Insertion gain vs. collector current Fig.8 Insertion gain vs. collector voltage Fig.9 Noise factor vs. collector current Rev.C 2/3 2 DC CURRENT TRANSFER RATIO :hFE INSERTION GAIN : IS21el (dB) TRANSITION FREQUENCY : fT (MHz) COLLECTOR SATURATION VOLTAGE :VCE(sat) (mV) 2 INSERTION GAIN : IS21el (dB) COLLECTOR TO BASE TIME CONSTANT : Cc rbb (ps) OUTPUT CAPACITANCE :CoB (pF) 2 FEEDBACK CAPACITANCE :Cre (pF) NOISE FIGURE : NF(dB) INSERTION GAIN : IS21el (dB)