UMX5NTR ROHM

High transition frequency (dual transistors) EMX5 / UMX5N / IMX5 Features Dimensions (Unit : mm) 1) Two 2SC3838K chips in a EMT or UMT or SMT package. EMX6 2) High transition frequency. (fT=3.2GHz) 3) Low output capacitance. (Cob=0.9pF) Inner circuits EMX5 / UMX5N IMX5 (3) (2) (1) (4) (5) (6) ROHM : EMT6 Each lead has same dimensions Tr2 Tr2 Tr1 SOT-563 Tr1 UMX5N (4) (5) (6) (3) (2) (1) Absolute maximum ratings (Ta=25C) Parameter Symbol Limits Unit Collector-base voltage VCBO 20 V Collector-emitter voltage VCEO 11 V Emitter-base voltage VEBO 3 V Collector current IC 50 mA EMX5 / UMX5N 150(TOTAL) 1 Collector power ROHM : UMT6 Each lead has same dimensions Pc mW dissipation EIAJ : SC-88 IMX5 300(TOTAL) 2 Junction temperature Tj 150 C IMX5 Storage temperature Tstg 55 to +150 C 1 120mW per element must not be exceeded. 2 200mW per element must not be exceeded. Package, marking, and packaging specifications Type UMX5N IMX5 EMX5 SMT6 Package EMT6 UMT6 Marking X5 X5 X5 Code TR T108 T2R Basic ordering unit (pieces) 8000 3000 3000 ROHM : SMT6 Each lead has same dimensions EIAJ : SC-74 This product might cause chip aging and breakdown under the large electrified environment. Please consider to design ESD protection circuit. www.rohm.com 2010.09 - Rev.C 1/2 c 2010 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs EMX5 / UMX5N / IMX5 Data Sheet Electrical characteristics (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Conditions Collector-base breakdown voltage BVCBO 20 V IC=10A Collector-emitter breakdown voltage BVCEO 11 V IC=1mA Emitter-base breakdown voltage BVEBO 3 V IE=10A Collector cutoff current ICBO 0.5 A VCB=10V Emitter cutoff current IEBO 0.5 A VEB=2V DC current transfer ratio 56 120 hFE VCE/IC=10V/5mA Collector-emitter saturation voltage VCE(sat) 0.5 V IC/IB=10mA/5mA Transition frequency fT 1.4 3.2 GHz VCE/IE=10V/10mA, f=500MHz Output capacitance 0.9 1.55 Cob pF VCB/f=10V/1MHz, IE=0A Transition frequency of the device. Electrical characteristics curves 5.0 500 Ta=25C 500 Ta=25C Ta=25C VCE=10V VCE=10V 200 2.0 200 100 1.0 100 50 0.5 50 Ic/IB=10 20 0.2 20 Ic/IB=2 10 0.1 10 0.1 0.2 0.5 1 2 510 20 50 0.1 0.2 0.5 1 2 5 10 20 50 0.1 0.2 0.5 1 2 5 10 20 50 COLLECTOR CURRENT : IC (mA) EMITTER CURRENT : IE (mA) COLLECTOR CURRENT : IC (mA) Fig.1 DC current gain vs. collector current Fig.3 Gain bandwidth product vs. emitter current Fig.2 Collector-emitter saturation voltage vs. collector current 5.0 Ta=25C Ta=25C 50 VCE=6V f=1MHz Ta=25C f=500MHz VCE=10V IE=0A f=31.8MHz 20 2.0 20 1.0 Cob 10 Cre 10 0.5 5.0 0.2 2.0 0 0.1 0.1 0.2 0.5 1 2 5 10 20 50 1.0 0.1 0.2 0.5 1 2 5 10 20 50 0.1 0.2 0.5 1 2 5 10 20 50 COLLECTOR CURRENT : IC (mA) COLLECTOR TO BASE VOLTAGE : VCB (V) COLLECTOR CURRENT : IC (mA) Fig.6 Noise factor vs. collector current characteristics Fig.4 Capacitance vs. reverse bias voltage Fig.5 Collector to base time constant vs. collector current characteristics www.rohm.com 2010.09 - Rev.C 2/2 c 2010 ROHM Co., Ltd. All rights reserved. Not Recommended for New Designs OUTPUT CAPACITANCE : Cob (pF) DC CURRENT TRANSFER RATIO : hFE FEEDBACK CAPACITANCE : Cre (pF) COLLECTOR TO BASE TIME CONSTANT : Cc rbb (ps) COLLECTOR SATURATION VOLTAGE : VCE(sat)(mV) NOISE FIGURE : NF (dB) TRANSITION FREQUENCY : fT (GHz)